Activation energies in diamond films evaluated using admittance spectroscopy and resistivity measurements

Abstract

This article reports on the study of high-quality boron-doped diamond films using admittance techniques. We have found two well-defined energy states at 74 and 340 meV, indicating that the doping procedure has induced defects and consequently provoked the localization of carriers. This is a direct indication that there are different coexisting conduction mechanisms for the transport of carriers. Additionally, we perform complementary resistivity experiments showing the presence of the variable range hopping as the dominant transport mechanism.

Electrical properties of boron doped CVD diamond after plasma cleaning probed by capacitance-voltage profiling

“…The analysis of the spectrum confirmed the presence of polycrystalline diamond in our samples presenting a well defined and sharp peak at 1332cm −1 corresponding to an sp 3 -bounded structure. Details on the measurement and analysis procedure can be found elsewhere [8] In order to study the cleaning process of diamond surface we built a conventional Schottky diode that was investigated before and after oxidation treatment. The ohmic electrical contacts were made from a stack of Ti/Pt/Au (20 nm/50 nm/100 nm) electrode deposited in a high vacuum chamber (10 −7 Torr) using shadow masks; devices were then annealed in r atmosphere at 00 C for 10 min.…”

Характеризация Электрофизическими Методами Монокристаллического Алмаза, Легированного Бором (Обзор)

“…В литературе имеется немногочисленное количество статей, посвященных адмиттансным (а также нестационарным емкостным) измерениям алмаза. Ранее они в основном были проведены на поликристаллических образцах [101,[128][129][130][131]; при этом для бора были получены энергии активации E A в диапазоне 300−360 meV.…”

Electrical and photoelectric properties of polycrystalline diamond films deposited from an abnormal glow discharge

“…Due to the limited possibility of using diamond single crystals and epitaxial diamond films, because of their high cost in the most appropriate instruments are the polycrystalline diamond films (PDF), which are obtained by well-studied methods of the vapor deposition [1][2][3][4][5][6][7][8]. PDF are successfully used for the production of the stable radiation-resistant UV detectors and ionizing radiation, as well as for laser and photodiode structures [1,4].…”

“…Dielectric PDF are used for these purposes (electrical conduction (=10 -15 -10 -11 S•cm -1 ). Depending on the characteristics of PDF polycrystalline structure, the content of alloying impurity atoms and defects in the PDF crystal structure, the electrical characteristics, as well as the mechanism of transport and type of charge carriers vary widely (=10 -6 -10 3 S•cm -1 ) [1,[4][5][6][7][8][9][10][11][12][13][14][15]. It stimulates the study of the peculiarities of polycrystalline films electric and photoelectric properties, and the investigation of the mechanisms determining these properties and the influence of deposition conditions on the change in the characteristics of the film material.…”

“…Unique chemical, mechanical, electrical, thermal, optical and photoelectrical properties of a diamond contribute to its wide application in high-frequency, high-temperature electronics and semiconductor manufacturing of a special purpose [1][2][3][4][5]. Due to the limited possibility of using diamond single crystals and epitaxial diamond films, because of their high cost in the most appropriate instruments are the polycrystalline diamond films (PDF), which are obtained by well-studied methods of the vapor deposition [1][2][3][4][5][6][7][8].…”