This article reports on the study of high-quality boron-doped diamond films using admittance techniques. We have found two well-defined energy states at 74 and 340 meV, indicating that the doping procedure has induced defects and consequently provoked the localization of carriers. This is a direct indication that there are different coexisting conduction mechanisms for the transport of carriers. Additionally, we perform complementary resistivity experiments showing the presence of the variable range hopping as the dominant transport mechanism.

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