Electrical and photoelectric properties of polycrystalline diamond films deposited from an abnormal glow discharge

Abstract

Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation A V Kabyshev, F V Konusov, G E Remnev et al. Abstract. Electrical and photovoltaic properties of polycrystalline diamond films (PDF), deposited from the abnormal glow discharge were analysed. Features of charge carrier transfer in PDF are determined by continuous energy distribution in the band gap of defect states of different nature. Dominated n-type conductivity activation component of electrical conduction and photoconductivity is complemented by a hopping mechanism with the participation of states near the Fermi level with a density 5.6·10 17 -2.1·10 21 eV -1 сm -3 . Activation transfer is realized in the exchange of charge carriers between the allowed bands and donor levels with the activation energy 0.007-0.21 eV, which are sparsely populated and have wide variation in their parameters. Trapping centers and carriers recombination are heterogeneously distributed in grain boundaries. Under lighting, the state density increases 3-5 times and probable jump length decreases by 1-3 nm. Spectral distribution centers of photosensitivity are correlated with the distribution of deep-level defects, determining the absorption spectra.

The Influence of High-Power Ion Beams and High-Intensity Short-Pulse Implantation of Ions on the Properties of Ceramic Silicon Carbide

“…CVC allows us to conclude that the concentration of electrical active defects N', their population by charge carriers n' and their degree of population n'/N' increase with depth of level ε in BG. The exponential distribution of the LS on energy N'() is realized in analogy with [1,10,11]. The coincidence of the CVC at U>0 and U<0 indicates a weak influence of the space charge on the dependence (U).…”

“…The factor σ 0 indicates that (n'/N') 3 >>(n'/N') 2 >>(n'/N') 1 . The values   below their values for intrinsic defects of SiC [1][2][3] due to the interaction between BD and a continuous distribution of LS in the BG, by analogy with [10,11]. The shallow donor levels with   <(0.1-0.3) eV may be due to impurity atoms N and Ti or vacancy V Si 2- [1,2].…”

“…where  0 is a pre-exponential factor, T 0 is an activation energy [10]. The LS density N(E F ) near the Fermi level was calculated from T 0 according to [10].…”

“…The LS density N(E F ) near the Fermi level was calculated from T 0 according to [10]. The sign of the dominant charge carriers was determined by the photo-and thermostimulated current amplitude I PhTSC (I TSC )(T, h U=0) [10].…”

“…The LS density N(E F ) near the Fermi level was calculated from T 0 according to [10]. The sign of the dominant charge carriers was determined by the photo-and thermostimulated current amplitude I PhTSC (I TSC )(T, h U=0) [10]. The spectral dependence of the absorption coefficient (h) in the intervalh=1.4-3.6 eV was calculated from the spectra of the diffuse reflection [11].…”