Transport charge of gallium arsenide films synthesized on polycrystalline silicon by ion ablation A V Kabyshev, F V Konusov, G E Remnev et al. Abstract. Electrical and photovoltaic properties of polycrystalline diamond films (PDF), deposited from the abnormal glow discharge were analysed. Features of charge carrier transfer in PDF are determined by continuous energy distribution in the band gap of defect states of different nature. Dominated n-type conductivity activation component of electrical conduction and photoconductivity is complemented by a hopping mechanism with the participation of states near the Fermi level with a density 5.6·10 17 -2.1·10 21 eV -1 сm -3 . Activation transfer is realized in the exchange of charge carriers between the allowed bands and donor levels with the activation energy 0.007-0.21 eV, which are sparsely populated and have wide variation in their parameters. Trapping centers and carriers recombination are heterogeneously distributed in grain boundaries. Under lighting, the state density increases 3-5 times and probable jump length decreases by 1-3 nm. Spectral distribution centers of photosensitivity are correlated with the distribution of deep-level defects, determining the absorption spectra.
A planar solid oxide fuel cell (SOFC) was fabricated using a commercial Ni/yttria-stabilized zirconia (YSZ) anode support, an YSZ/gadolinium-doped ceria (GDC) thin-film electrolyte, and a composite cathode of La0.6Sr0.4Co0.2Fe0.8O3/Gd0.1Ce0.9O1.95 (LSCF/GDC). A small, three-cell, SOFC stack is assembled using 10 cm × 10 cm single cells, metallic interconnects, and glass-based sealing. The stack performance was examined at various fuel flow rates of H2 + N2 and air at a fixed temperature of 750 °C. The three-cell stack with a crossflow design produced peak power density of 0.216 W/cm2 or about 39 W total power at 750 °C.
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