Achieving High Field-Effect Mobility Exceeding 50 cm&lt;inline-formula&gt; &lt;tex-math notation="TeX"&gt;\(^{\mathrm {2}}\) &lt;/tex-math&gt;&lt;/inline-formula&gt;/Vs in In-Zn-Sn-O Thin-Film Transistors

Song, Jang Ho; Kim, Kwang Suk; Mo, Yeon Gon; Choi, Rino; Jeong, Jae Kyeong

doi:10.1109/led.2014.2329892

Cited by 58 publications

(13 citation statements)

References 14 publications

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“…Figures 5(a) and (b) shows the transfer characteristics and mobility variations of the representative IZTO TFTs with the atomic ratio of In: Zn: Sn = 40: 36: 24. A high mobility of 52.4 cm 2 Vs −1 and low SS factor of 0.2 V/decade were observed without a deterioration of the off-state drain current and V th value (I on/off ratio > 2 × 10 8 , V th ∼ 0.1 V) [61]. On the other hand, the introduction of a carrier suppressor in the IZO system tended to reduce the mobility of the TFTs (so called percolation conduction), even though it improved substantially the resistance of the TFTs against an external gate bias stress and photobias stability.…”

Section: Quaternary Tmo Semiconductormentioning

confidence: 97%

Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

Kwon

Jeong

2015

Semicond. Sci. Technol.

151

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This review gives an overview of the recent progress in vacuum-based n-type transition metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding metal oxide TFTs in terms of fundamental electron structure, device process and reliability have been published. In particular, the required field-effect mobility of TMO TFTs has been increasing rapidly to meet the demands of the ultra-high-resolution, large panel size and three dimensional visual effects as a megatrend of flat panel displays, such as liquid crystal displays, organic light emitting diodes and flexible displays. In this regard, the effects of the TMO composition on the performance of the resulting oxide TFTs has been reviewed, and classified into binary, ternary and quaternary composition systems. In addition, the new strategic approaches including zinc oxynitride materials, double channel structures, and composite structures have been proposed recently, and were not covered in detail in previous review papers. Special attention is given to the advanced device architecture of TMO TFTs, such as back-channel-etch and self-aligned coplanar structure, which is a key technology because of their advantages including low cost fabrication, high driving speed and unwanted visual artifact-free high quality imaging. The integration process and related issues, such as etching, post treatment, low ohmic contact and Cu interconnection, required for realizing these advanced architectures are also discussed.

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Section: Quaternary Tmo Semiconductormentioning

confidence: 97%

Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

Kwon

Jeong

2015

Semicond. Sci. Technol.

151

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“…Most of the ternary/quaternary oxide materials are amorphous in nature, which can be beneficial for fabricating high performance TFTs. The a-ZnSnO, a-InZnO, a-HfInZnO, a-GaInZnO, a-InSnZnO, and a-GaZnSnO are the most prominent ternary/multi component materials for TFT applications [9,[23][24][25][26][27][28][29][30][31][32]. All of these materials exhibit n-type conductivity due to the existence of intrinsic donors.…”

Section: Semiconductor Materials (Binary Ternary and Multi-component)mentioning

confidence: 99%

Improvement of Mobility in Oxide-Based Thin Film Transistors: A Brief Review

Raja¹,

Jang²,

Nguyen³

et al. 2015

Transactions on Electrical and Electronic Materials

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Amorphous oxide-based thin-film transistors (TFTs) have drawn a lot of attention recently for the next-generation high-resolution display industry. The required field-effect mobility of oxide-based TFTs has been increasing rapidly to meet the demands of the high-resolution, large panel size and 3D displays in the market. In this regard, the current status and major trends in the high mobility oxide-based TFTs are briefly reviewed. The various approaches, including the use of semiconductor, dielectric, electrode materials and the corresponding device structures for realizing high mobility oxide-based TFT devices are discussed.

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“…th . As discussed above, the slopes of S ID /I2 ds against V gs −V th of our devices are between −1 and −2, thus LFN can be simulated by using carrier number with correlated mobility fluctuations ( N-μ) model[28]-[30]. Based on Nμ model, the interfacial charges fluctuation results to a supplementary change of the mobility, and then induces…”

mentioning

confidence: 94%

“…As switching elements for addressing the pixel circuit [1], Sn-doped indium-zinc-oxide (IZO) thin-film transistors (TFTs) exhibit high mobility (even over 50 cm 2 /Vs) and low off current (less than 10 −13 A) [1], [2], which can meet the requirements of next generation high vision with a pixel resolution of 8k×4k and a lower charged time per unit frame (less than 1.2 μs) [3], [4]. The best performance of oxide TFTs can be obtained at the boundary between the amorphous and crystalline phases [5]- [7].…”

Section: Introductionmentioning

confidence: 99%

Dimension Scaling Effects on Conduction and Low Frequency Noise Characteristics of ITO-Stabilized ZnO Thin Film Transistors

Liu

Huang

Deng

et al. 2020

IEEE J. Electron Devices Soc.

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Conduction characteristics and low frequency noises in ITO-stabilized ZnO thin film transistors (TFTs) with constant channel width (W=50 μm) and different channel lengths (L=5, 10, 25, 50 and 100 μm) are measured and analysis. Firstly, dependences of threshold voltage and field effect mobility on channel length are examined. With decreasing channel length, the threshold voltage shifts to the negative direction which may attribute to carrier diffusion from source/drain to the intrinsic device channel. In addition, significant degradation of field effect mobility is observed in short channel device which are induced by the presence of series contact resistance. The value of contact resistance has also been extracted. Secondly, the drain current noise power spectral densities (S ID) are measured at varied effective gate voltages. The measured noises follow a 1/f γ and γ is about −1.1. Moreover, the normalized noises (S ID /I ds) are dependent linearly on the inverse of channel length and the slope is about −0.75. Finally, the dominant mechanism of low frequency noise in ITO-stabilized ZnO thin film transistor are examined. The slope of normalized noise against effective gate voltage are extracted, which are varied from −1.03 to −1.84 with decreasing channel length and thus it indicates that ITO-stabilized ZnO TFTs varied from bulk dominated devices to interface dominated devices. By using of N-μ model, the normalized noises are simulated by considering of contact resistance. Several noise parameters (flat-band voltage noise spectral density, etc) are extracted and analysis. INDEX TERMS ITO-stabilized ZnO, thin film transistor, low frequency noise, channel length, threshold voltage, field effect mobility.

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Achieving High Field-Effect Mobility Exceeding 50 cm<inline-formula> <tex-math notation="TeX">\(^{\mathrm {2}}\) </tex-math></inline-formula>/Vs in In-Zn-Sn-O Thin-Film Transistors

Cited by 58 publications

References 14 publications

Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

Improvement of Mobility in Oxide-Based Thin Film Transistors: A Brief Review

Dimension Scaling Effects on Conduction and Low Frequency Noise Characteristics of ITO-Stabilized ZnO Thin Film Transistors

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