Amorphous oxide-based thin-film transistors (TFTs) have drawn a lot of attention recently for the next-generation high-resolution display industry. The required field-effect mobility of oxide-based TFTs has been increasing rapidly to meet the demands of the high-resolution, large panel size and 3D displays in the market. In this regard, the current status and major trends in the high mobility oxide-based TFTs are briefly reviewed. The various approaches, including the use of semiconductor, dielectric, electrode materials and the corresponding device structures for realizing high mobility oxide-based TFT devices are discussed.
Indium tin zinc oxide (ITZO)-based thin-film transistors (TFTs) were fabricated by dc magnetron sputtering in Ar + O 2 reactive gas, at room temperature. We present the effect of post-deposition annealing of ITZO thin films on the oxygen vacancies and on the characteristics of TFT devices. When the annealing temperature was increased from room temperature to 350 • C, the resistivity of ITZO film increased from 2.05 × 10 1 to 2.60 × 10 3 cm and the interface trap density (N t ) of the TFTs reduced from 3.18 × 10 13 to 4.83 × 10 11 cm −2 . The TFT with the ITZO film which was annealed at 350 • C showed a very small shift in turn-on voltage, even after applying positive bias stress of +12 V for 10 4 s. The current-voltage characteristics of 350 • C annealing temperature sample indicated that these TFTs were in an enhanced mode of transistor operation with a high on-to-off current ratio of ∼1.26 × 10 6 , high field-effect mobility of 14.17 cm 2 V −1 s −1 , and low subthreshold slope of 1.23 V/dec. The trapping time reduced from 3720 to 1546 s as the annealing temperature increased from room temperature to 350 • C. These results suggest that thermal annealing played an important role in reducing defects as well as improvement in stability of the TFTs.
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