Improved Data Retention of InSnZnO Nonvolatile Memory by H2O2Treated Al2O3Tunneling Layer: A Cost-Effective Method

Raja, Jayapal; Nguyen, Cam Phu Thi; Lee, Changmin; Balaji, Nagarajan; Chatterjee, Somenath; Jang, Kyungsoo; Kim, Hyoungsub; Yi, Junsin

doi:10.1109/led.2016.2599559

Cited by 41 publications

(31 citation statements)

References 30 publications

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“…The surface of ScAlSZ consists of Sc, Zr, Al, and C compounds, and OH groups (Figure 3a). Detailed information on those compounds was obtained after analysis of the O 1s, Zr 3d, Al 2p and Sc 2p regions (Figure 3b [31][32][33][34][35]. Similar positions of binding energies were found for ScSZ by Xue et al in [28].…”

Section: X-ray Diffraction Patterns Show That 6scalsz Powder Hassupporting

confidence: 64%

E-Beam Deposition of Scandia-Stabilized Zirconia (ScSZ) Thin Films Co-Doped with Al

et al. 2020

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Scandia alumina stabilized zirconia (ScAlSZ) thin films were deposited using e-beam evaporation, and the effects of deposition parameters on the structure and chemical composition were investigated. The analysis of thin films was carried out using Energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), X-Ray Diffraction Analysis (XRD) and Raman spectroscopy methods. It was found that the chemical composition of ScAlSZ thin films was different from the chemical composition of the initial powder. Moreover, the Al concentration in thin films depends on the deposition rate, resulting in a lower concentration using a higher deposition rate. XPS analysis revealed that ZrOx, oxygen vacancies, high concentrations of Al2O3 and metallic Al exist in thin films and influence their structural properties. The crystallinity is higher when the concentration of Al is lower (higher deposition rate) and at higher substrate temperatures. Further, the amount of cubic phase is higher and the amount of tetragonal phase lower when using a higher deposition rate.

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Section: X-ray Diffraction Patterns Show That 6scalsz Powder Hassupporting

confidence: 64%

E-Beam Deposition of Scandia-Stabilized Zirconia (ScSZ) Thin Films Co-Doped with Al

et al. 2020

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“…57 The peak belonging to the oxygen in Al 2 O 3 (Al-O) is located at 530.6 eV, while peaks at 531.3 and 532.4 eV are ascribed to the O in H 2 O, and OH À bonds in aluminum hydroxide (AlOOH), respectively. [58][59][60] The peaks at 530.2 and 532.5 eV in the SiC supported catalyst are attributed to the low-coordinated and high coordinated O-Si, respectively, while the peak located at 531.6 eV belongs to the O-Si-C bond. [61][62][63] It was found that the main type of functional group for the Cu1:Ce3/CNT and Cu1:Ce3/AC catalysts was OQC-O.…”

Section: Resultsmentioning

confidence: 99%

The influence of support composition on the activity of Cu:Ce catalysts for selective catalytic reduction of NO by CO in the presence of excess oxygen

2020

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“…As a result, electrons could be injected from the conduction band of the ITZO channel through the tunneling layer and stored in the Si-rich SiO X charge trapping sites. It is known that the electrons were trapped not only in shallow or deep traps of SiO X , but also in OH¯, H + residues, and oxygen vacancy (V O ) sites at the interfaces with the ITZO channel layer in the programming mode [18]. Thus, the memory window can be expected to increase due to the plenty of the negative charges.…”

Section: Resultsmentioning

confidence: 99%

The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide

Park

Shin

2019

Nanomaterials

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We fabricated the transparent non-volatile memory (NVM) of a bottom gate thin film transistor (TFT) for the integrated logic devices of display applications. The NVM TFT utilized indium–tin–zinc–oxide (ITZO) as an active channel layer and multi-oxide structure of SiO2 (blocking layer)/Si-rich SiOX (charge trapping layer)/SiOXNY (tunneling layer) as a gate insulator. The insulators were deposited using inductive coupled plasma chemical vapor deposition, and during the deposition, the trap states of the Si-rich SiOx charge trapping layer could be controlled to widen the memory window with the gas ratio (GR) of SiH4:N2O, which was confirmed by fourier transform infrared spectroscopy (FT-IR). We fabricated the metal–insulator–silicon (MIS) capacitors of the insulator structures on n-type Si substrate and demonstrated that the hysteresis capacitive curves of the MIS capacitors were a function of sweep voltage and trap density (or GR). At the GR6 (SiH4:N2O = 30:5), the MIS capacitor exhibited the widest memory window; the flat band voltage (ΔVFB) shifts of 4.45 V was obtained at the sweep voltage of ±11 V for 10 s, and it was expected to maintain ~71% of the initial value after 10 years. Using the Si-rich SiOX charge trapping layer deposited at the GR6 condition, we fabricated a bottom gate ITZO NVM TFT showing excellent drain current to gate voltage transfer characteristics. The field-effect mobility of 27.2 cm2/Vs, threshold voltage of 0.15 V, subthreshold swing of 0.17 V/dec, and on/off current ratio of 7.57 × 107 were obtained at the initial sweep of the devices. As an NVM, ΔVFB was shifted by 2.08 V in the programing mode with a positive gate voltage pulse of 11 V and 1 μs. The ΔVFB was returned to the pristine condition with a negative voltage pulse of −1 V and 1 μs under a 400–700 nm light illumination of ~10 mWcm−2 in erasing mode, when the light excites the electrons to escape from the charge trapping layer. Using this operation condition, ~90% (1.87 V) of initial ΔVFB (2.08 V) was expected to be retained over 10 years. The developed transparent NVM using Si-rich SiOx and ITZO can be a promising candidate for future display devices integrating logic devices on panels.

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Improved Data Retention of InSnZnO Nonvolatile Memory by H₂O₂Treated Al₂O₃Tunneling Layer: A Cost-Effective Method

Cited by 41 publications

References 30 publications

E-Beam Deposition of Scandia-Stabilized Zirconia (ScSZ) Thin Films Co-Doped with Al

E-Beam Deposition of Scandia-Stabilized Zirconia (ScSZ) Thin Films Co-Doped with Al

The influence of support composition on the activity of Cu:Ce catalysts for selective catalytic reduction of NO by CO in the presence of excess oxygen

The Characteristics of Transparent Non-Volatile Memory Devices Employing Si-Rich SiOX as a Charge Trapping Layer and Indium-Tin-Zinc-Oxide

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