Improvement of Mobility in Oxide-Based Thin Film Transistors: A Brief Review

Abstract

Amorphous oxide-based thin-film transistors (TFTs) have drawn a lot of attention recently for the next-generation high-resolution display industry. The required field-effect mobility of oxide-based TFTs has been increasing rapidly to meet the demands of the high-resolution, large panel size and 3D displays in the market. In this regard, the current status and major trends in the high mobility oxide-based TFTs are briefly reviewed. The various approaches, including the use of semiconductor, dielectric, electrode materials and the corresponding device structures for realizing high mobility oxide-based TFT devices are discussed.

Correlation between the Annealing Effect and the Electrical Characteristics of the Depletion Region in ZnO, SnO2and ZTO Films

“…The Schottky barrier has a potential barrier and has a non-linear I-V curve, because of the depletion layer, which is due to the electron-hole combination [10][11][12]. There are many studies concerning the oxygen vacancy and structure, but the correlation between oxygen vacancy [13][14][15], structure and electronic properties remain un-researched.…”

Metal Oxide Thin Film Transistor with Nano Inorganic Gate Dielectric : Material Chemistry, Nanoscience, Solution Processing and Electronics

“…Metal Oxide Thin Film Transistors (MOTFT) are a distinct class of metal-oxidesemiconductor field-effect transistors (MOSFET) fabricated by coating a layer of an active semiconductor layer, metallic contacts, and the dielectric layer over an insulating substrate. And, Printed Thin Film Transistors (TFT) are a major application of printed electronics [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20]. Solution processed inorganic oxide gate dielectric is key element for low voltage MOTFT.…”

Quantum Confinement Effect in Amorphous In–Ga–Zn–O Heterojunction Channels for Thin-Film Transistors

“…Thin-film transistors (TFTs) based on oxide semiconductors (OSs) have attracted considerable attention for next generation flat-panel displays (FPDs) due to their advantages such as high field effect mobility (µ FE ), steep subthreshold swing, and low leakage current [1][2][3][4][5][6][7][8][9]. Although µ FE of the OS TFTs is more than an order of magnitude higher than that of hydrogenated amorphous silicon (a-Si:H) TFTs, further improvement of the µ FE has been required for OS TFTs to expand their applications [9][10][11][12][13]. Optimization of compositions of the OSs is an approach to improve µ FE , such as an increase of In ratio in the OSs [9,[12][13][14][15].…”