The full color 12.1‐inch WXGA active‐matrix organic light emitting diode (AMOLED) display was, for the first time, demonstrated using indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) as an active‐matrix back plane. It was found that the fabricated AMOLED display did not suffer from the well‐known pixel non‐uniformity of luminance, even though the simple structure consisting of 2 transistors and 1 capacitor was adopted as a unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductor. The n‐channel a‐IGZO TFTs exhibited the field‐effect mobility of 8.2 cm2/Vs, threshold voltage of 1.1 V, on/off ratio of > 108, and subthreshold gate swing of 0.58 V/decade. The AMOLED display with a‐IGZO TFT array would be promising for large size applications such as note PC and HDTV because a‐IGZO semiconductor can be deposited on large glass substrate (> Gen. 7) using conventional sputtering system.
Australian resources. Books, images, historic newspapers, maps, archives and more. The Economic and Social Modernization of the Republic of Korea. This article delineates the history of modernisation theory. Modernisation refers to a model of a Modernisation theory attempts to identify the social variables that contribute to social 3.4.1 China 3.4.2 South Korea 3.4.3 Japan 3.4.4 Turkey Agents of modernisation at work in Korea included the US Army, the Economic The Economic and Social Modernization of the Republic of Korea.
Abstract— A full‐color 12.1‐in.WXGA active‐matrix organic‐light‐emitting‐diode (AMOLED) display was, for the first time, demonstrated using indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) as an active‐matrix backplane. It was found that the fabricated AMOLED display did not suffer from the well‐known pixel non‐uniformity in luminance, even though the simple structure consisting of two transistors and one capacitor was adopted as the unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductors. The n‐channel a‐IGZO TFTs exhibited a field‐effect mobility of 17 cm2/V‐sec, threshold voltage of 1.1 V, on/off ratio >109, and subthreshold gate swing of 0.28 V/dec. The AMOLED display with a‐IGZO TFT array is promising for large‐sized applications such as notebook PCs and HDTVs because the a‐IGZO semiconductor can be deposited on large glass substrates (larger than Gen 7) using the conventional sputtering system.
Bottom gate and etch stopper-type thin-film transistors (TFTs) with a channel layer of indium-zinc-tin oxide were fabricated. The resulting TFTs exhibited a high mobility exceeding 52 cm 2 /V s, a low subthreshold gate swing of 0.2 V/decade, a threshold voltage of 0.1 V, and an I ON/ OFF ratio of >2 × 10 8 . The stability of the oxide passivated device under the positive and negative bias stress conditions was superior to that of the nitride passivated device, which can be attributed to the lower trap density in the channel layer.
A full‐color 12.1‐in. WXGA active‐matrix organic‐light‐emitting‐diode (AMOLED) display was, for the first time, demonstrated using indium‐gallium‐zinc oxide (IGZO) thin‐film transistors (TFTs) as an active‐matrix backplane. It was found that the fabricated AMOLED display did not suffer from the well‐known pixel non‐uniformity in luminance, even though the simple structure consisting of two transistors and one capacitor was adopted as the unit pixel circuit, which was attributed to the amorphous nature of IGZO semiconductors. The n‐channel a‐IGZO TFTs exhibited a field‐effect mobility of 17 cm2/V‐sec, threshold voltage of 1.1 V, on/off ratio > 109, and subthreshold gate swing of 0.28 V/dec. The AMOLED display with a‐IGZO TFT array is promising for large‐sized applications such as notebook PCs and HDTVs because the a‐IGZO semiconductor can be deposited on large glass substrates (larger than Gen 7) using the conventional sputtering system.
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