2005
DOI: 10.1109/jssc.2005.856268
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A very high precision 500-nA CMOS floating-gate analog voltage reference

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Cited by 38 publications
(21 citation statements)
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“…A range of voltage and current reference generators are available to be compiled on the FPAA to reduce the temperature variability of the system. Here, we propose to use a Floating Gate (FG) as a programmable element to achieve reasonable temperature insensitivity rather than trimming/single value FG to achieve precision [9]. These references form standard blocks in the open source tools built in the Scilab/Xcos environment, available online [10,11].…”
Section: Analog Processing and Temperature Dependencementioning
confidence: 99%
“…A range of voltage and current reference generators are available to be compiled on the FPAA to reduce the temperature variability of the system. Here, we propose to use a Floating Gate (FG) as a programmable element to achieve reasonable temperature insensitivity rather than trimming/single value FG to achieve precision [9]. These references form standard blocks in the open source tools built in the Scilab/Xcos environment, available online [10,11].…”
Section: Analog Processing and Temperature Dependencementioning
confidence: 99%
“…There are alternative circuits capable of obtaining lowvoltage and high-accuracy, nevertheless those approaches may require components not readily available in CMOS technology (additional fabrications steps), or CMOS transistor on subthreshold operation, or floating gate or even by using trimming [25][26][27]. Since the circuit is intended to be used in an implanted device, the temperature range is very small and therefore it is not taken into account.…”
Section: Voltage References Circuitmentioning
confidence: 99%
“…It is typically the sum of the base-emitter voltage of a bipolar transistor biased in the forward region, which exhibits negative TC, and an amplified version of the difference between two base-emitter voltages generated by two bipolar devices sized with different emitter areas and possibly different bias current [6]. However, compared with V T , which is a fully linear function of T, V BE is a complex function of T containing many higher order terms.…”
Section: A New Curvature Compensation Technique For a New Structurementioning
confidence: 99%
“…In [5], the reference voltage is logarithmic curvature-corrected using a multiple differential structure with 9.4 ppm/°C. In [6], the reference voltage can obtain about 1 ppm/°C using floating-gate with stored charge technique, but the circuit is very complex. In [7], the approach is the use of exponential temperature dependencies of the current gain b of an NPN, which is similar to the technique of this paper.…”
Section: Introductionmentioning
confidence: 99%