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2009
DOI: 10.1007/s10470-009-9317-7
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A 0.52 ppm/°C high-order temperature-compensated voltage reference

Abstract: This paper proposed a new high-order curvature compensation technique for a new bandgap voltage reference structure using the temperature characteristics of current gain b and emitter bandgap narrowing factor DE G of a lateral NPN bipolar transistor. The new structure can produce two voltage references, which are 1.209 and 2.418 V, respectively. The simulation results show that the temperature coefficients of the two output voltage are 0.52 ppm/°C, the PSRR is more than 60 dB for frequencies at 10 kHz, and the… Show more

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Cited by 3 publications
(2 citation statements)
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“…For example, a voltage reference [155] or IR drop sensor [156] may be made temperature insensitive to improve the accuracy of a sensor reading. temperature variations on the ring oscillator, allowing for improved accuracy in voltage measurements.…”
Section: Temperature Sensitivity Adjustment For Improved Sensor Accuracymentioning
confidence: 99%
“…For example, a voltage reference [155] or IR drop sensor [156] may be made temperature insensitive to improve the accuracy of a sensor reading. temperature variations on the ring oscillator, allowing for improved accuracy in voltage measurements.…”
Section: Temperature Sensitivity Adjustment For Improved Sensor Accuracymentioning
confidence: 99%
“…For example, a voltage [25] or IR drop sensor [26] may be made temperature insensitive to improve the accuracy of a sensor reading. Reducing the impact of temperature variations on ring oscillator frequency can enable dramatic improvements in voltage variation readings.…”
Section: B Temperature Sensitivity Adjustment For Sensor Accuracymentioning
confidence: 99%