Managing Temperature Effects in Nanoscale Adaptive Systems

Wolpert, David; Ampadu, Paul

doi:10.1007/978-1-4614-0748-5

Cited by 74 publications

(49 citation statements)

References 112 publications

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“…The carrier mobility is limited by phonon scattering as the temperature change by approximately T -3/2 . 52 On the other hand, the impurity scattering decreases as the temperature increases; this increases the mobility by a factor of approximately T 3/2 . However, the effect of impurity scattering is often observed only at very low temperatures.…”

Section: Comparison Between Electrochemical and Photocatalytic Oermentioning

confidence: 99%

Temperature Dependence of Electrocatalytic and Photocatalytic Oxygen Evolution Reaction Rates Using NiFe Oxide

et al. 2016

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The present work compares the oxygen evolution reaction (OER) in electrocatalysis and photocatalysis in aqueous solutions using nanostructured NiFeO x as catalysts. The impacts of pH and reaction temperature on the electrocatalytic and photocatalytic OER kinetics were investigated. For electrocatalysis, a NiFeO x catalyst was hydrothermally decorated on Ni foam. In 1 M KOH solution, the NiFeO x electrocatalyst achieved 10 mA cm −2 at an overpotential of 260 mV. The same catalyst was decorated on the surface of Ta 3 N 5 photocatalyst powder. The reaction was conducted in the presence of 0.1 M Na 2 S 2 O 8 as a strong electron scavenger, thus likely leading to the OER being kinetically relevant. When compared with the bare Ta 3 N 5 , NiFeO x /Ta 3 N 5 demonstrated a 5-fold improvement in photocatalytic activity in the OER under visible light irradiation, achieving a quantum efficiency of 24% at 480 nm. Under the conditions investigated, a strong correlation between the electrocatalytic and photocatalytic performances was identified: an improvement in electrocatalysis corresponded with an improvement in photocatalysis without altering the identity of the materials. The rate change at different pH was likely associated with electrocatalytic kinetics that accordingly influenced the photocatalytic rates. The sensitivity of the reaction rates with respect to the reaction temperature resulted in an apparent activation energy of 25 kJ mol −1 in electrocatalysis, whereas the apparent activation energy in photocatalysis was 16 kJ mol −1 . The origin of the difference in these activation energy values is likely attributed to the possible effects of temperature on the individual thermodynamic and kinetic parameters of the reaction process. The work described herein demonstrates a method of "transferring the knowledge of electrocatalysis to photocatalysis" as a strong tool to rationally and quantitatively understand the complex reaction schemes involved in photocatalytic reactions.

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Section: Comparison Between Electrochemical and Photocatalytic Oermentioning

confidence: 99%

Temperature Dependence of Electrocatalytic and Photocatalytic Oxygen Evolution Reaction Rates Using NiFe Oxide

et al. 2016

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“…α and β are material specific constants that were determined to be 4.734 × 10 4 eV/K and 636 K respectively. 18 In addition to n i the carrier densities at thermal equilibrium n 0 and p 0 need to be calculated as well. For n-type semiconductors this is expressed as:…”

Section: A Carrier Concentrationmentioning

confidence: 99%

Temperature dependency of the silicon heterojunction lifetime model based on the amphoteric nature of dangling bonds

et al. 2016

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This work adapts a model to simulate the carrier injection dependent minority carrier lifetime of crystalline silicon passivated with hydrogenated amorphous silicon at elevated temperatures. Two existing models that respectively calculate the bulk lifetime and surface recombination velocity are used and the full temperature dependency of these models are explored. After a thorough description of these temperature dependencies, experimental results using this model show that the minority carrier lifetime changes upon annealing of silicon heterojunction structures are not universal. Furthermore, comparisons of the temperature dependent model to using the room temperature model at elevated temperatures is given and significant differences are observed when using temperatures above 100 °C. This shows the necessity of taking temperature effects into account during in-situ annealing experiments.

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“…are not an issue here as only the relative change in resistance matters [6]. We further assume that the silicon resistivity is proportional to T β [11], where β is a known constant once the resistor process is determined and can be obtained from foundry. 1 With (2) and (3) and the temperature-dependent resistivity of silicon, the joint effect of temperature and stress will result in…”

Section: B Self-calibration Processmentioning

confidence: 99%

“…By plugging (7) into (6), we can infer 1 The value of β holds constant at particular temperature ranges [11] and them self-calibration will be performed separately in each temperature range. the following relationship:…”

Section: B Self-calibration Processmentioning

confidence: 99%

Runtime Self-Calibrated Temperature–Stress Cosensor for 3-D Integrated Circuits

Zhang

et al. 2014

IEEE Trans. VLSI Syst.

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On-chip temperature and stress sensors are important for runtime system management techniques tackling thermomechanical reliability issues in 3-D integrated circuits (ICs). However, traditional temperature and stress sensor designs require large calibration overhead to improve accuracy, which incurs significant cost for massive production. To address the challenge, in this paper, we propose a novel temperature-stress cosensor design for 3-D ICs. By exploring the inherent reciprocity of temperature and stress mechanisms, it achieves runtime selfcalibration such that no dedicated calibration effort is needed. Simulation results show that the cosensor achieves 0.26°C and 0.43 MPa accuracy on average in temperature and stress measurements, respectively, when evaluated in [−60°C, 140°C]. In addition, the accuracy of self-calibrated sensors remains within 1.1°C and 2.3 MPa when there exists up to 5% measurement noise, which shows that the self-calibration process is relatively insensitive to various noises.

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Managing Temperature Effects in Nanoscale Adaptive Systems

Cited by 74 publications

References 112 publications

Temperature Dependence of Electrocatalytic and Photocatalytic Oxygen Evolution Reaction Rates Using NiFe Oxide

Temperature Dependence of Electrocatalytic and Photocatalytic Oxygen Evolution Reaction Rates Using NiFe Oxide

Temperature dependency of the silicon heterojunction lifetime model based on the amphoteric nature of dangling bonds

Runtime Self-Calibrated Temperature–Stress Cosensor for 3-D Integrated Circuits

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