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perovskite device allowing us to rule out this mechanism. We conclude that recombination across the interface via C 60 trap states is the operational mechanism and that the traps originate either from charge transfer states or DOS broadening at the interface pinning the LUMO below the conduction band of the perovskite. The investigation laid out here and proof of concept devices demonstrates that reducing the hole concentration at the perovskite C 60 interface and "point contact" strategies will allow one to improve the device V OC , paving the way for further strategies to eliminate this loss pathway.

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