A sub-2-dB noise figure linear wideband low noise amplifier in 0.18 µm CMOS

Jafarnejad, Roya; Jannesari, Abumoslem; Sobhi, Jafar

doi:10.1016/j.mejo.2017.07.012

Cited by 12 publications

(9 citation statements)

References 20 publications

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“…The higher-order frequency components up to the third-order are of critical importance in RF circuits and hence, this work restricts to third-order nonlinearity characteristics. In (22), when 1 and 2 are spaced close to each other as is the case generally, second-order and third-order components described above appear close to the fundamentals 1 and 2 . Any nth-order frequency component grows n-times faster than the fundamental and causes the compression of the entire system resulting in distortion.…”

Section: Distortion Analysismentioning

confidence: 67%

“…Substituting (22) in (20) yields second-order frequency content at 1 ± 2 and third-order frequency content at 2 1 ± 2 and 2 2 ± 1 . The higher-order frequency components up to the third-order are of critical importance in RF circuits and hence, this work restricts to third-order nonlinearity characteristics.…”

Section: Distortion Analysismentioning

confidence: 99%

“…The common-gate (CG) based LNAs, and resistive load based LNAs are also ideal candidates for wideband LNA designs. Some of the recently proposed UWB LNA designs are reported in [17][18][19][20][21][22][23][24][25][26][27][28][29][30]. Cross-coupled and body driven techniques are exploited in [17], for operating at a reduced supply voltage, current reuse and forward body bias techniques are used in [18].…”

Section: Introductionmentioning

confidence: 99%

“…In [19], second-order intermodulation (IM2) cancellation technique is proposed along with dual-loop feedback for stabilising the insertion loss (S11). Active inductor based input matching network is proposed in [20], linearity improved g m -boosted LNA is reported in [21], and a linear LNA with less than 2 dB NF is reported in [22]. Dual-resonance network for UWB applications is proposed in [23,24], a two-stage LNA with resistive feedback and on-chip inductors for frequency response improvements is employed.…”

Section: Introductionmentioning

confidence: 99%

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An ultra-low-power low-noise amplifier using cross-coupled positive feedback for 5G IoT applications

2019

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The wireless communication in the next generation is bound to be driven by massive machine-type communication or in other words Internet-of-things (IoT). In the near future, the need for effective communication and higher data processing rates will require IoT devices to support 5G networks. For 5G IoT applications in the ultra-wideband range (3.1-10.6 GHz), the analog receivers must provide both high-performance and energy efficiency simultaneously. This work addresses the demands of 5G IoT analog receivers by proposing an ultra-low-power low noise amplifier (LNA) employing cross-coupled positive shunt feedback. The proposed LNA is designed in UMC 180 nm deep n-well process, and the post-layout characterization is done using Cadence SpectreRF. The proposed design achieves a peak gain of 9.94 dB and a noise figure of 3.2-1.086 dB along the usable bandwidth of 3.2-9.625 GHz while consuming an ultra-low-power of 493 µW from a 1-V power supply. The maximum input-referred third-order intercept point of 8.81 dBm is attained for an input signal at 2.4 GHz and the interferer as close as 2.425 GHz. The LNA consumes a minimal layout area of only 676.2 µm × 350.7 µm. The proposed LNA has the better figure-of-merit while consuming almost 50% less power than the recently reported sub-mW LNA in literature.

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Section: Distortion Analysismentioning

confidence: 67%

Section: Distortion Analysismentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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An ultra-low-power low-noise amplifier using cross-coupled positive feedback for 5G IoT applications

2019

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“…In differential LNA, g m and NF are optimized by cross‐coupled CG configuration, which has reduced the effect of thermal noise by 50% . Unfortunately, g m boosting is inadequate in some configurations as reported by Atiyeh et al…”

Section: Noise Reduction Techniquesmentioning

confidence: 99%

Survey on parameter optimization of mobile communication band low noise amplifier design

Roobert¹,

Rani²

2019

Int J RF Microw Comput Aided Eng

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A comparative study on recent works on low noise amplifiers (LNAs) designed to be operated at mobile communication band is performed in this article. Here, specifications of different generations of mobile communication are listed, which are considered to classify recent works on LNAs. Even though gain and noise figure (NF) are the primary parameters of LNA; other parameters like power, linearity, bandwidth, and area also get importance. Due to this, optimization techniques handpicked for all those parameters are discussed. The inverse relation between gain and NF is exploited to achieve low noise and high gain together. While increasing the gain, power consumption is increased by drain current. Each LNA is found as good in terms of gain and other parameters to satisfy the requirements. The figure of merit is opted to find the performance of each LNA, and the comparison is performed. The best parameters reported in the comparison are 31.53 dB of gain, 0.7 dB of NF, 0.03 mw of power consumption, 18.14 dBm of third-order input intercept point (IIP3), 24 GHz bandwidth and 0.0052 mm 2 of area at different frequencies and technology nodes. In this survey, as per the optimized FoM for mobile communication, crosscoupled common gate differential LNA, which was designed to be operated at 0.3 to 2.96 GHz gives better results among CMOS LNAs.

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A low‐power wideband LNA exploiting current‐reuse and noise cancelation techniques

Khanehbeygi

Jafarnejad

Koozehkanani

et al. 2022

Circuit Theory & Apps

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This paper presents an inductorless low-power wideband Low Noise Amplifier (LNA) in TSMC 0.18 μm CMOS technology. The proposed LNA is based on the Common-Gate (CG) topology, which consists of three consecutive stages: CG, Common-Source (CS), and Collector stage. The CG and CS configurations are responsible for providing the wideband input impedance matching and the majority of the gain, respectively. The overall performance of the LNA has been improved by applying noise cancelation, capacitive-peaking, and current reuse techniques. Unlike the conventional structure, the CG and CS sections' noise is canceled by utilizing a novel noise-canceling mechanism, simultaneously. Furthermore, with the capacitive-peaking technique, the voltage gain drop across hi gher frequencies is prevented, and thus, the bandwidth of the structure is improved. The trade-off between power consumption and input impedance has been dramatically resolved by employing the current reuse technique in the CG stage. Post-layout simulation results of the presented noise-canceling LNA demonstrate a Noise Figure (NF) of 2.19-2.58 dB and a maximum voltage gain of 19.84 dB with a À3 dB bandwidth of 0.2-2.85GHz. The simulated input/output matching (i.e., S11/S22) is better than À14.73/À19.43 dB in the entire bandwidth. Additionally, Input Third Intercept Point (IIP3) of À4.56 dBm is achieved. The results are gained by consuming only 2.87 mW under a supply voltage of 1.2 V and occupying a 0.0429 mm 2 of die area.

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A sub-2-dB noise figure linear wideband low noise amplifier in 0.18 µm CMOS

Cited by 12 publications

References 20 publications

An ultra-low-power low-noise amplifier using cross-coupled positive feedback for 5G IoT applications

An ultra-low-power low-noise amplifier using cross-coupled positive feedback for 5G IoT applications

Survey on parameter optimization of mobile communication band low noise amplifier design

A low‐power wideband LNA exploiting current‐reuse and noise cancelation techniques

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