A study of lead zirconate titanate etching characteristics using magnetized inductively coupled plasmas

Etching Characteristics and Mechanisms of Pb(Zr,Ti)O3, Pt, and SiO2 in an Inductively Coupled HBr/Cl2 Plasma

“…There were several works reported on the dry etching properties of the PZT thin films using fluorine-, chlorine-, and bromine-based binary gas mixtures. [3][4][5][6][7][8][9] All these works give similar results on the behavior of the PZT etching rate versus the main operating parameters (input power, bias power, and gas pressure), but different results on the effects of gas mixing ratios. In particular, Chung 3) and Efremov et al 4) reported an almost constant PZT etching rate up to 80% Ar in Cl 2 /Ar plasmas.…”

“…In particular, Chung 3) and Efremov et al 4) reported an almost constant PZT etching rate up to 80% Ar in Cl 2 /Ar plasmas. In contrast, Kang et al 2) and Lee et al 5) reported a maximum etching rate in Cl 2 /Ar plasmas for 20 and 10% Ar, respectively, while Chung et al 6) obtained a maximum etching rate for 60% Ar in HBr/ Ar plasmas. Later, Efremov et al 7) obtained a nonmonotonic behavior of the PZT etching rate in the CF 4 /Ar plasma with a maximum at 80% Ar.…”