Effect of microstructure on reactive ion etching of sol–gel-derived PZT thin film

Shi, Peng; Yao, Xi

doi:10.1016/j.ceramint.2003.12.078

Cited by 2 publications

(1 citation statement)

References 6 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This is consistent to experiments done by Kim et al for argon-ion bombardment of PZT layers [8,9]. Concerning these XPS-data Pb 2+ is reduced to metallic Pb as well as Ti 4+ is reduced to Ti 3+ and Ti 2+ species.…”

supporting

confidence: 92%

Ga⁺ implantation in a PZT film during focused ion beam micro‐machining

Wollschläger

Österle

Häusler

et al. 2015

Phys. Status Solidi C

View full text Add to dashboard Cite

The objective of the present work was to study the impact of Focused Ion Beam (FIB) machining parameters on the thickness of the damaged layer within a thin film PZT. Therefore, different Ga+‐ ion doses and ion energies were applied to a standard PZT film (80/20 lead zirconium titanate) under two beam incidence angles (90° and 1°). The thicknesses of the corresponding Ga+‐implanted layers were then determined by cross‐sectional TEM in combination with energy dispersive spectroscopic (EDS) line‐scans and correlated with polarisation hysteresis loops. The results show a decrease of Ga+‐implanted layer thickness with decreasing inclination angle, whereas ion energy and ion dose could be correlated with gallium concentration in the implanted layers.. Under the most unfavorable conditions the depth of the affected zone was 26 nm, it was only 2 nm for the most favorable conditions. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

supporting

confidence: 92%