Etch characteristics of SrBi2Ta2O9 (SBT) thin films using magnetized inductively coupled plasmas

et al. 2004

phys. stat. sol. (a)

A metal–ferroelectric–insulator–semiconductor field‐effect transistor (MFISFET) was fabricated with an etch‐stop process based on the selectivity between SrBi2Ta2O9 (SBT) and Y2O3. Depending on the selectivity with various Ar/Cl2 gas mixture, we could find the acceptable thickness of Y2O3 for a successful etch‐stop process. The electrical characteristics of the MFISFET fabricated with the developed etch‐stop process showed no damage of the silicon surface of source/drain regions, resulting in good ferroelectric memory characteristics and programmable operation. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Section: Resultsmentioning

confidence: 99%

Fabrication of MFISFETs with Pt/SrBi2Ta2O9/Y2O3/Si gate structure by developing an etch-stop process

et al. 2004

phys. stat. sol. (a)

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“…[5][6][7][8][9] The inductively coupled plasma reactive ion etching ͑ICP-RIE͒ system used in this work has advantages over the RIE technique. So far, several attempts have been tried to fabricate a metalferroelectric-semiconductor or metal-ferroelectric-insulatorsemiconductor field-effect transistor ͑MFISFET͒, where one insulator among CeO 2 , Y 2 O 3 , Ta 2 O 5 , and Al 2 O 3 was inserted between the ferroelectric material and silicon for the better interface, leakage current, memory window, and retention.…”

Section: Introductionmentioning

confidence: 99%

Selective etching process of SrBi2Ta2O9 and CeO2 for self-aligned ferroelectric gate structure

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

et al. 2004

We have investigated an etch-stop process and fabricated the ferroelectric gate transistor without damage of source and drain regions using etching selectivity between etch rates of SrBi2Ta2O9 (SBT) and CeO2. The SBT and CeO2 were etched with inductively coupled plasma (ICP) reactive ion etching at various Ar/Cl2 gas mixing ratios, ICP powers, and rf bias powers. The etching selectivity of SBT/CeO2 was 6.8 and the vertical etching angle of SBT was 82° at the condition of 50% Cl2 concentration with the ICP power of 900 W and the rf bias power of 100 W. The characteristics of devices fabricated with an etch-stop process showed that there was no degradation of the ferroelectric characteristics and on/off ratio of programmable operation was 104.

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Memory operation of Pt–SrBi2Ta2O9–Y2O3–Si field-effect transistor with damage-free selective dry etching process

Solid-State Electronics

et al. 2005