Memory operation of Pt–SrBi2Ta2O9–Y2O3–Si field-effect transistor with damage-free selective dry etching process

Shim, Sun Il; Kwon, Young Suk; Kim, Seong Il; Kim, Yong Tae; Park, Jung Ho

doi:10.1016/j.sse.2004.11.015

Cited by 3 publications

(3 citation statements)

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“…Reactive ion etching (RIE) is the preferred etching method to achieve these goals, because it combines both physical and chemical etching mechanisms, resulting in optimized structures with steep, smooth sidewalls. The plasma etching characteristics of Al 2 O 3 films in various chemistries have been widely studied [16][17][18][19][20][21], and recently reports on the RIE behaviour of Y 2 O 3 films have also appeared in the literature [22,23]. RIE of optical waveguides in Al 2 O 3 films has been reported [24], but the process involved a complicated three-level masking procedure and utilized a metallic Cr mask, which is less desirable than other materials, because metals can introduce extra losses in the waveguide.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of low-loss channel waveguides in Al2O3 and Y2O3 layers by inductively coupled plasma reactive ion etching

et al. 2007

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Etching of amorphous Al 2 O 3 and polycrystalline Y 2 O 3 films has been investigated using an inductively coupled reactive ion etch system. The etch behaviour has been studied by applying various common process gases and combinations of these gases, including CF 4 /O 2 , BCl 3 , BCl 3 /HBr, Cl 2 , Cl 2 /Ar and Ar. The observed etch rates of Al 2 O 3 films were much higher than Y 2 O 3 for all process gases except for Ar, indicating a much stronger chemical etching component for the Al 2 O 3 layers. Based on analysis of the film etch rates and an investigation of the selectivity and patterning feasibility of possible mask materials, optimized optical channel-waveguide structures were fabricated in both materials. In Al 2 O 3 , channel waveguides were fabricated with BCl 3 /HBr plasma and using a standard resist mask, while in Y 2 O 3 , channel waveguides were fabricated with Ar and using either a resist or a sputter deposited Al 2 O 3 mask layer. The etched structures in both materials exhibit straight sidewalls with minimal roughness and sufficient etch depths (up to 530 nm for Al 2 O 3 and 250 nm for Y 2 O 3 ) for defining waveguides with strong optical confinement. Using the developed etch processes, low additional optical propagation losses (on the order of 0.1 dB/cm) were demonstrated in single-mode ridge waveguides in both Al 2 O 3 and Y 2 O 3 layers at 1550 nm.

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Section: Introductionmentioning

confidence: 99%

Fabrication of low-loss channel waveguides in Al2O3 and Y2O3 layers by inductively coupled plasma reactive ion etching

et al. 2007

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“…When a small amount of B 2 O 3 was doped ((0?1 wt-%), SrTa 2 O 6 was formed in addition to SrBi 2 Ta 2 O 9 . SrTa 2 O 6 is considered as a product of thermal decomposition of SrBi 2 Ta 2 O 9 at elevated temperatures 15 and this decomposition reaction is expressed as below SrBi 2 Ta 2 O 9 ?SrTa 2 O 6 zBi 2 O 3 (1) In the above reaction, highly volatile Bi 2 O 3 escaped quickly from the samples once it was formed. On the contrary, SrTa 2 O 6 formation did not occur when more than 0?3 wt-%B 2 O 3 was added.…”

Section: Resultsmentioning

confidence: 99%

“…SrBi 2 Ta 2 O 9 is considered one of the potential candidates used in FeRAM. [1][2][3][4][5] This material has a bismuth layered perovskite structure with the formula of (Bi 2 O 2 ) 2z -(A m21 B m O 3mz1 ) 22 , where (A m21 B m O 3mz1 ) 22 forms the perovskite structure between (Bi 2 O 2 ) 2z layers. SrBi 2 Ta 2 O 9 possesses several advantages including excellent fatigue resistance, low operating voltage, low leakage current and high signal/noise ratio.…”

Section: Introductionmentioning

confidence: 99%

Densification and dielectric properties of strontium bismuth tantalate ceramics

Huang

2008

Advances in Applied Ceramics

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The effects of B 2 O 3 doping on the sintering processes and dielectric properties of SrBi 2 Ta 2 O 9 were investigated in this study. The sinterability of SrBi 2 Ta 2 O 9 was significantly enhanced by doping B 2 O 3 due to the formation of liquid phase at elevated temperatures. The addition of B 2 O 3 also led to inhibited thermal decomposition and enhanced grain growth of SrBi 2 Ta 2 O 9 . The amount of doped B 2 O 3 was found to substantially influence the dielectric constants of SrBi 2 Ta 2 O 9 ceramics. When a proper amount of B 2 O 3 was added, the dielectric constants greatly increased. For facilitating the densification process and improving the dielectric properties of SrBi 2 Ta 2 O 9 , it is important to control the doping amount of B 2 O 3 .

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Retention mechanism study of the ferroelectric field effect transistor

Pan

2011

Applied Physics Letters

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Single-transistor ferroelectric field effect transistor offers attractive features for future memory applications, such as scalable cell structure, high speed, and low power consumption. However, its relatively short retention time has prevented its application as a non-volatile memory. In order to investigate its retention mechanism, we have developed an automatic retention measurement technique, which enables direct flatband voltage tracking shortly after programming. Two mechanisms, based on the effects of the depolarization field and the gate leakage followed by trapping, respectively, have been identified responsible for the memory window loss in different time regimes, according to the data obtained from this technique.

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Memory operation of Pt–SrBi2Ta2O9–Y2O3–Si field-effect transistor with damage-free selective dry etching process

Cited by 3 publications

References 20 publications

Fabrication of low-loss channel waveguides in Al2O3 and Y2O3 layers by inductively coupled plasma reactive ion etching

Fabrication of low-loss channel waveguides in Al2O3 and Y2O3 layers by inductively coupled plasma reactive ion etching

Densification and dielectric properties of strontium bismuth tantalate ceramics

Retention mechanism study of the ferroelectric field effect transistor

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