A New High Holding Voltage Dual-Direction SCR With Optimized Segmented Topology

Xiaozong, Huang; Liou, Juin J.; Liu, Fan; Liu, Zhiwei; Chen, Hui

doi:10.1109/led.2016.2598063

Cited by 63 publications

(19 citation statements)

References 9 publications

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“…The increase in D1 increased the holding voltage of the proposed SCR to 128 V, whereas the increase in D2 considerably increased the holding voltage of the proposed device to 149 V. This was because Qpnp with a base region of relatively high doping concentration exhibits larger increase in base current than Qnpn owing to the structural features of the proposed SCR. Figure 4 shows the TLP curves for various segment topologies in the 4H-SiC process of the proposed SCR [19], [20]. The experimental results reveal that It2 losses, which are caused by the small Si emitter, hardly occurred in 4H-SiC with relatively high robustness, and the holding voltage of the proposed device significantly increased to 169 V. This indicates that the segment topology used in the 4H-SiC SCR is very effective.…”

Section: Measurement Results and Discussionmentioning

confidence: 98%

“…Here, Qpnp forms a base region at a high N-drift doping concentration, has low current gain (β), and diminishes the positive feedback of the SCR. Additionally, the Qnpn and Qpnp emitters are separated by applying segment topology [19], [20]. Therefore, the proposed device has very high holding voltage owing to its structural characteristics.…”

Section: Novel 4h-sic Based Scr Structurementioning

confidence: 99%

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Design of 4H-SiC-Based Silicon-Controlled Rectifier With High Holding Voltage Using Segment Topology for High-Voltage ESD Protection

Lee

Kim

et al. 2020

IEEE Electron Device Lett.

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In this letter, a new silicon-controlled rectifier (SCR) structure fabricated using 4H-SiC materials has been proposed and investigated. The proposed structure alleviates the strong-snapback phenomenon that occurs in the 4H-SiC SCR and demonstrates low trigger voltage and high holding voltage characteristics. The proposed device exhibits improved snapback characteristics with very high holding voltage against electrostatic discharge surges owing to the structural features and application of segment topology. It also has excellent on-resistance and improved thermal reliability owing to the physical characteristics of 4H-SiC. Traditional SCR and low-voltage trigger SCR (LVTSCR) are fabricated with 4H-SiC under the same conditions and their electrical characteristics are comparatively analyzed with those of the proposed SCR. This study also evaluates the electrical characteristics at high temperatures (300-500 K) to verify the high-temperature reliability of the proposed structure.

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Section: Measurement Results and Discussionmentioning

confidence: 98%

Section: Novel 4h-sic Based Scr Structurementioning

confidence: 99%

Design of 4H-SiC-Based Silicon-Controlled Rectifier With High Holding Voltage Using Segment Topology for High-Voltage ESD Protection

Lee

Kim

et al. 2020

IEEE Electron Device Lett.

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“…6 shows the segment topology implemented in the proposed device using the 0.13 um BCD process [17]. The segment topology can effectively increase the holding voltage without increasing the ESD current discharge length [18]. This study utilizes a 1:1 segment ratio (one emitter to one tie-down area) for high-voltage applications Fig.7 shows the TLP curves of the proposed ESD protection device with segment ratios varying from 0 to 11.…”

Section: Introductionmentioning

confidence: 99%

A Novel Low Dynamic Resistance Dual-Directional SCR with High Holding Voltage for 12 V Applications

Koo

2020

IEEE J. Electron Devices Soc.

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The excellent area efficiency of dual-directional SCRs (DDSCRs) have made them desirable for low-voltage and high-voltage applications. However, to implement the required symmetrical structure, conventional DDSCRs have to lengthen their ESD discharge path. In addition, the low holding voltage of existing DDSCRs is not suitable for high-voltage applications. In this study, a novel DDSCR with a high holding voltage and low dynamic resistance is proposed and its electrical characteristics are verified. The proposed DDSCR has two additional internal parasitic bipolar transistors compared to a conventional lowtriggering voltage DDSCR (LTDDSCR). Self-gate biasing reduces latch-mode feedback between the parasitic bipolar transistors in the SCR. The device is fabricated using 0.13 um BCD processes and implements a segment layout resulting in a very low dynamic resistance of 2.2 Ω and excellent holding voltages of up to 17.2 V. The proposed DDSCR demonstrates improved reliability and area efficiency for 12 V applications.

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“…Guan et al used a nested structure to significantly improve the SCR holding voltage and achieve high ESD robustness [10]. Many researchers have proposed other methods to improve the ESD characteristics of SCR devices [11][12][13][14][15][16][17][18][19]. And it is commonly accepted that the conduction path of the device directly affects the SCR test indicators.…”

Section: Introductionmentioning

confidence: 99%

Analysis of High-Failure Mechanism Based on Gate-Controlled Device for Electro-Static Discharge Protection

et al. 2020

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A New High Holding Voltage Dual-Direction SCR With Optimized Segmented Topology

Cited by 63 publications

References 9 publications

Design of 4H-SiC-Based Silicon-Controlled Rectifier With High Holding Voltage Using Segment Topology for High-Voltage ESD Protection

Design of 4H-SiC-Based Silicon-Controlled Rectifier With High Holding Voltage Using Segment Topology for High-Voltage ESD Protection

A Novel Low Dynamic Resistance Dual-Directional SCR with High Holding Voltage for 12 V Applications

Analysis of High-Failure Mechanism Based on Gate-Controlled Device for Electro-Static Discharge Protection

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