2020
DOI: 10.1109/led.2020.3022888
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Design of 4H-SiC-Based Silicon-Controlled Rectifier With High Holding Voltage Using Segment Topology for High-Voltage ESD Protection

Abstract: In this letter, a new silicon-controlled rectifier (SCR) structure fabricated using 4H-SiC materials has been proposed and investigated. The proposed structure alleviates the strong-snapback phenomenon that occurs in the 4H-SiC SCR and demonstrates low trigger voltage and high holding voltage characteristics. The proposed device exhibits improved snapback characteristics with very high holding voltage against electrostatic discharge surges owing to the structural features and application of segment topology. I… Show more

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Cited by 12 publications
(5 citation statements)
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“…Controlling the battery charging process by opening and closing the direct current flow from the rectifier to the battery is the basic function of a battery charge controller [20]. An example of the application of the BCR system is the installation of BCR on a UPS that uses a battery as a power source for electronic equipment [21]. Thyristors are used as rectifiers, thyristors are semiconductor-based electronic devices that can regulate large currents and voltages [22].…”
Section: Methodsmentioning
confidence: 99%
“…Controlling the battery charging process by opening and closing the direct current flow from the rectifier to the battery is the basic function of a battery charge controller [20]. An example of the application of the BCR system is the installation of BCR on a UPS that uses a battery as a power source for electronic equipment [21]. Thyristors are used as rectifiers, thyristors are semiconductor-based electronic devices that can regulate large currents and voltages [22].…”
Section: Methodsmentioning
confidence: 99%
“…First, the proposed LDO regulator exhibited excellent transient response characteristics and very low bias current characteristics even under high load current conditions. Second, the proposed LDO regulator is proven to meet the ESD requirements of low-voltage integrated circuits by integrating a SCR based ESD protection circuit to prevent IC damage due to static electricity [20]- [23].…”
Section: Introductionmentioning
confidence: 99%
“…The LVTSCR ESD protection structure has improved electrical properties to effectively prevent ESD surge at a low voltage. The proposed LDO regulator has built in an LVTSCR-based ESD protection circuit to secure the high reliability of the IC circuit [18][19][20][21][22][23][24]. The proposed LDO regulator using the current driving buffer structure was secured reliably by applying ESD surge to POWER CLAMP and I/O CLAMP, and then the output voltage was verified.…”
Section: Introductionmentioning
confidence: 99%