A new characterization method for electrostatically actuated resonant MEMS: Determination of the mechanical resonance frequency, quality factor and dielectric charging

Kalicinski, Stanislaw; Tilmans, H.A.C.; Wevers, Martine; Wolf, Ingrid De

doi:10.1016/j.sna.2008.06.032

Cited by 20 publications

(4 citation statements)

References 20 publications

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“…Such characterization and equivalent circuit determination also allow building the most compatible electronic driving circuits of the actuator, which is an important issue that affects greatly the overall MEMS-based system performance, especially in sensitive systems like MEMS interferometer-based spectrometry and optical coherence tomography. Many techniques for the actuator characterization based on both electrical and optical measurements were reported in the literature [133][134][135][136][137][138][139][140][141]. In this section, we will focus on the characterization methods that are suitable for MEMS interferometers.…”

Section: Characterization Methodsmentioning

confidence: 99%

“…The motional resistance, capacitance and inductance represent the losses, the restoring spring compliance and the system mass, respectively. In the electrical domain, the equivalent circuit parameters are usually extracted from the electrical frequencydomain admittance measurements carried out by impedance analysis systems and subsequent curve fitting [138]. The common problem in the curve-fitting technique is that the extracted values of the fitting parameters can differ from one optimization algorithm to another.…”

Section: Characterization Methodsmentioning

confidence: 99%

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Monolithic silicon‐micromachined free‐space optical interferometers onchip

Sabry

Khalil

Bourouina

2014

Laser & Photonics Reviews

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The integration of microactuators within a silicon photonic chip gave rise to the field of optical micro‐electro‐mechanical systems (MEMS) that was originally driven by the telecommunication market. Following the latter's bubble collapse in the beginning of the third millennium, new directions of research with considerable momentum appeared focusing on the realization and applications of miniaturized instrumentation in biology, chemistry, physics and materials science. At the heart of these applications light interferometry is a key optical phenomenon, in which miniaturized scanning interferometers are the manipulating optical devices. Monolithic free‐space optical interferometers realized on a silicon chip take advantage of the recent progress in the microfabrication technology that is enabling accurate control of the etching depth, the aspect ratio, the verticality and the curvature of the etched surfaces. The fabrication technology, the library of micro‐optical and mechanical components, the realized architectures and their characterization are described in detail in this review, followed by a discussion of the foreseen challenges.

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Section: Characterization Methodsmentioning

confidence: 99%

Section: Characterization Methodsmentioning

confidence: 99%

Monolithic silicon‐micromachined free‐space optical interferometers onchip

Sabry

Khalil

Bourouina

2014

Laser & Photonics Reviews

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“…Linking the measured impedance with equivalent circuits of mechanical structures aids design and analysis [2]. Continuing advances in CMUT analysis [3], equivalent circuit modeling, and simulation [4] enables extraction of even more utility from impedance measurements. A single impedance measurement gives the impedance of the clamped capacitance in parallel with the motional impedance.…”

Section: Introductionmentioning

confidence: 99%

Deriving a Simulation Model of a Single 40-KHZ Cmut Cell From Impedance and Interferometer Measurements

Wygant¹,

Kupnik²,

Khuri‐Yakub³

2010

2010 Solid-State, Actuators, and Microsystems Workshop Technical Digest

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A spring-mass-damper system and corresponding equivalent circuit help design and analyze capacitive micromachined ultrasonic transducers (CMUTs). The ability to extract similar models from measured devices helps design verification and development of simulation models that match fabricated devices. Impedance measurements yield the CMUT's clamped capacitance and motional impedance, which fits a 4-element equivalent circuit. Additional measurements help extract a more complete equivalent circuit that includes the electromechanical transformer ratio and effective mechanical elements.In this work, we combine impedance measurements, the tightly specified mass of the CMUT plate, and interferometer displacement measurements to compute a more complete equivalent circuit. The circuit obtained for two 40-kHz CMUT cells exhibits a good fit to the model derived from the device geometry alone. The experimentally-obtained model exhibits larger damping which is likely due to energy loss in addition to radiated ultrasound.

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“…The calculation of Young's modulus is directly related to the material density, which will be slightly different for films deposited under different conditions. Comb-drive resonators are commonly used to measure Young's modulus 43,44,45,46 where Tang 47 explored in detail the mathematical basis for resonance in a comb drive. Using the spring constant in the x-direction, , the resonant frequency can be calculated as:…”

mentioning

confidence: 99%

Stress Monitoring of Post-processed MEMS Silicon Microbridge Structures Using Raman Spectroscopy

Starman

Coutu

2012

Exp Mech

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Inherent residual stresses during material deposition can have profound effects on the functionality and reliability of fabricated Micro-Electro-Mechanical Systems (MEMS) devices. Residual stress often causes device failure due to curling, buckling, or fracture. Typically, the material properties of thin films used in surface micromachining are not well controlled during deposition. The residual stress; for example, tends to vary significantly for different deposition methods. Currently, few nondestructive techniques are available to measure residual stress in MEMS devices prior to the final release etch. In this research, micro-Raman spectroscopy is used to measure the residual stresses in polysilicon MEMS microbridge devices. This measurement technique was selected since it is nondestructive, fast, and provides the potential for in-situ stress monitoring. Raman spectroscopy residual stress profiles on unreleased and released MEMS microbridge beams are compared to analytical and FEM models to assess the viability of micro-Raman spectroscopy as an in-situ stress measurement technique. Raman spectroscopy was used during post-processing phosphorus ion implants on unreleased MEMS devices to investigate and monitor residual stress levels at key points during the post-processing sequences. As observed through Raman stress profiles and verified using on-chip test structures, the post-processing implants and accompanying anneals resulted in residual stress relaxation of over 90%.

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A new characterization method for electrostatically actuated resonant MEMS: Determination of the mechanical resonance frequency, quality factor and dielectric charging

Cited by 20 publications

References 20 publications

Monolithic silicon‐micromachined free‐space optical interferometers onchip

Monolithic silicon‐micromachined free‐space optical interferometers onchip

Deriving a Simulation Model of a Single 40-KHZ Cmut Cell From Impedance and Interferometer Measurements

Stress Monitoring of Post-processed MEMS Silicon Microbridge Structures Using Raman Spectroscopy

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