Abstract- THEORYMicrowave power has a dual effect on RF MEMS switches.Consider the capacitive switch shown in Figure 1. First, the microwave power deflects the switch in a manner similar to an applied DC bias. Second, it induces current in the suspended bridge which results in ohmic heating. This heating causes the metal to expand, relaxing the bridge, and thus lowering the pull-in voltage. The following sections derive the effective voltage caused by the combined DC and RF biases, the pullin voltage as a function of increased bridge temperature, the temperature rise in the bridge, and finally the measurable pullin voltage. Cross Section
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and United Kingdom. These papers will provide the attendees with up-to-date information on a wide range of subjects that makes this conference so attractive to the practicing engineer.Additionally, the 2009 IEEE Holm Conference will make it possible for any attendee to discuss personally, with any author, either additional details concerning the work presented by the author at the conference or any subject related to the author's field of expertise. BACKGROUNDThe Holm Conference began in 1953 as a forum for the discussion of electrical contact phenomena and related fields. In 1968, the conference was named the Holm Conference in honor of Dr. Ragnar Holm. Dr. Holm, whose contributions to the field of electrical contacts spanned 50 years and forms the foundation of the electrical contacts field, was the inspiration and guide of the Conference from its inception until his death is 1970.In addition to the Annual Conference, the Conference Organization regularly conducts an intensive course on contacts and participates in the biannual International Conference on Electrical Contacts.Abstracting is permitted with credit to the source. Libraries are permitted to photocopy beyond the limit of U.S. copyright law, for private use of patrons, those articles in this volume that carry a code at the bottom of the first page, provided the per-copy fee indicated in the code is paid through the Copyright Clearance Center, 222 Rosewood Drive, Danvers, MA 01923. For other copying, reprint, or republication permission, write to the IEEE Copyrights Manager, IEEE Operations Center, 445 Hoes Lane, Piscataway, NJ 08855-1331. All FOREWORDWelcome to the 55 th IEEE Holm Conference. For all of us, 2009 has been a very trying year. The global financial crisis has taken its toll on our customers, our businesses and our personal psyche. Many of colleagues are still suffering the effects of cut backs and job losses. The scale and speed of this crisis is something that two years ago would have been considered science fiction. And yet, through all of the turmoil and panic, our community has put together a very impressive technical program for the 2009 Conference. We have 51 papers covering three days dealing with both theoretical and practical considerations and investigations discussing devices operating at both the nanoamp as well as kiloamp ranges. Considering last year's 53 papers were the most papers ever presented in a non ICEC co-sponsored Conference, this years' 51 papers is truly a monumental accomplishment. The credit for this achievement belongs to the strong heritage of technical excellence fostered by the Holm Conference and most importantly, to a passionate group of scientists and engineers who continue to advance our technical understanding of electrical contact phenomenon. I would like to personally thank everyone who has helped us put this program togetherincluding, but not limited to, the authors, the reviewers, the Holm Technical Program committee, the Antler awards committee, our conference sponsors and the IEEE staff. A ...
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