A monolithic high power Ka-band PIN switch

Bellantoni, J.V.; Bartle, D.; Payne, D.N.; McDermott, Gerry; Bandla, S.; Tayrani, R.; Raffaelli, L.

doi:10.1109/mcs.1989.37260

Cited by 19 publications

(1 citation statement)

References 5 publications

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“…The process of traditional p-i-n diodes, however, is incompatible with the existing MMICs process technology [7], [8]. It also yields high DC power dissipation in the control bias circuitry [9]. Therefore, pHEMT switches are an attractive alternative, since they offer significant design flexibility, which is wellmatched with the MMIC process, and have faster switching speed.…”

Section: Introductionmentioning

confidence: 99%

Design and analysis of compact MMIC switches utilising GaAs pHEMTs in 3D multilayer technology

Haris

Kyabaggu

Alim

et al. 2017

Semicond. Sci. Technol.

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In this paper, we demonstrate for the first time the implementation of 3-Dimensional (3D) multilayer technology on GaAsbased pseudomorphic high electron mobility transistor (pHEMT) switches. Two types of pHEMT switches are considered, namely single-pole single-throw (SPST) and single-pole double-throw (SPDT). The design and analysis of the devices are demonstrated first through a simulation of the industry-recognised standard model, TriQuint's Own Model -Level 3 (TOM3), developed by TriQuint Semiconductor, Inc. From the simulation analysis, three optimised SPST and SPDT pHEMT switches which can address applications ranging from L to X bands, are fabricated and tested. The performance of the pHEMT switches using multilayer technology are comparable to those of the current state-of-the-art pHEMT switches, while simultaneously offering compact circuits with the advantages of integration with other MMIC components.

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Section: Introductionmentioning

confidence: 99%

Design and analysis of compact MMIC switches utilising GaAs pHEMTs in 3D multilayer technology

Haris

Kyabaggu

Alim

et al. 2017

Semicond. Sci. Technol.

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Low-insertion-loss hybridp-i-n diode switches inKu andKa bands

Blais-Morin

Laurin

2000

Microw. Opt. Technol. Lett.

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A novel switch topology is proposed in which p‐i‐n diodes are embedded in a transformer network free of via holes. The topology is designed to achieve cancellation of diode parasitics and optimization of insertion loss. Prototypes for 15 and 29.75 GHz operation showing very good insertion loss (<0.5 dB) are presented. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 28: 28–32, 2001.

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