Low-insertion-loss hybridp-i-n diode switches inKu andKa bands

Blais-Morin, Louis-Antoine; Laurin, Jean‐Jacques

doi:10.1002/1098-2760(20010105)28:1<28::aid-mop8>3.0.co;2-e

Cited by 4 publications

(4 citation statements)

References 11 publications

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“…The overlapped bandwidth of 12% obtained for the three polarizations is comparable with those reported in [11] and [13]. In this configuration, switching PIN diodes are embedded in transformers, and transformers are connected to the feeding system, adopting the technique presented in [15]. Since only two PIN diodes are included in the feeding circuit, the antenna system is simpler compared to those reported in [11,13,14].…”

Section: Introductionsupporting

confidence: 68%

“…If PIN diodes are directly connected in series or in shunt with transmission lines, their junction capacitances can degrade the matching bandwidths when diodes are in Off states. To overcome this limitation, the topology presented in [15] is adopted. In this topology, diodes are embedded in a transformer network consisting of two transmission line sections, L 1 and L 2 , as presented in Fig.…”

Section: Feeding System With Pin Diode Switchesmentioning

confidence: 99%

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Polarization Reconfigurable Slot-Fed Cylindrical Dielectric Resonator Antenna

Esmaeili¹,

Laurin²

2020

PIER

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A new design for a cylindrical dielectric resonator antenna (DRA) with a capability of switching between circular, linear horizontal and linear vertical polarizations is introduced. The DRA, operating at the center frequency of 3.25 GHz, is fed by a microstrip line through two dog-bone slots. In this design, only two PIN diodes are employed as switching elements which significantly decreases the complexity of DC biasing circuits compared to existing designs. The PIN diodes are embedded in transformers connected to the feeding microstrip lines. This technique conveniently allows to make compensations for parasitic effects of the PIN diodes junction capacitors on the antenna matching bandwidth. The circular, linear horizontal and linear vertical polarizations have a bandwidth of 22%, 17% and 18%, respectively. The 3-dB axial ratio bandwidth for the circular polarization is 12%. The measured results obtained from prototyped antenna agree well with simulated results of the designed antenna system, which confirms the validity of the design process.

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Section: Introductionsupporting

confidence: 68%

Section: Feeding System With Pin Diode Switchesmentioning

confidence: 99%

Polarization Reconfigurable Slot-Fed Cylindrical Dielectric Resonator Antenna

Esmaeili¹,

Laurin²

2020

PIER

Self Cite

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“…In WiMAX base stations or customer premise equipment, the output power levels may range from 10 to 20 W. Therefore, the p‐i‐n diode T/R switches are needed as they can tolerate much higher power than the FET switches. To make a T/R switch, the most common configuration [3] is to use the p‐i‐n diodes together with quarterwave lines as shown in Figure 1.…”

Section: Introductionmentioning

confidence: 99%

An absorptive bandpass‐integrated p‐i‐n diode T/R switch for 2.5 GHz WiMAX high power terminals

Phudpong

Youngthanisara

Kukieattikool

et al. 2012

Micro & Optical Tech Letters

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This article presents a new technique for a transmit/receive (T/R) switch, which originally consists of p‐i‐n diodes and quarterwave lines. By using a reverse‐biased capacitance of the p‐i‐n diodes and additional inductive components, the conventional T/R switch can be made to incorporate a function of a bandpass filter. The filter response can be theoretically designed by configuring the inductance and capacitance values. In this article, an absorptive bandpass‐integrated p‐i‐n diode T/R switch is presented. It achieves a bandpass response at 2.5 GHz with a bandwidth of 450 MHz and an insertion loss of 2.3 dB. It offers high return loss and high isolation, 20 and 50 dB, respectively, and can tolerate power up to 20 W. This filter‐integrated switch could be used as a T/R switch for high power time division duplex systems such as WiMAX in the 2.3–2.7 GHz frequency band. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 54:2705–2708, 2012; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27210

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“…Moreover, the size of the switch is substantially increased in accordance with the number of added PIN diodes. A number of design methods using various microstrip resonators have been reported in the literature [1][2][3][4] that claim to enhance the performance of a switch. However, their bandwidths are too narrow and the off-state isolations and on-state insertion losses are not particularly good.…”

Section: Introductionmentioning

confidence: 99%

A band‐rejection type RF switch based on a dual‐mode microstrip ring resonator

Lee

Ryu

Moon

et al. 2010

Micro & Optical Tech Letters

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A band-rejection type RF switch, which has very high offstate isolation, low on-state insertion loss, and adjustable bandwidth, is proposed using a dual-mode ring resonator and two PIN diodes. To enable sharp band stop and dual-mode transmission, the ring resonator is directly fed using nonorthogonal feeding. Two PIN diodes are mounted in shunt after a quarter-wavelength transmission line from each feeding point, to turn the switch on and off and to reduce the size of the ring resonator. To estimate the practicable transmission characteristics of the proposed switch in relation to the angle of feeding and the wire-bonded PIN diodes, a lossy transmission-line equivalent circuit model is proposed, and even-odd mode analysis is carried out. The calculated frequency response shows good agreement with the measurement. The fabricated switch exhibits off-state isolation of 43.08 dB, and on-state insertion loss of 0.74 dB, within the range of 2.298-2.401 GHz.ABSTRACT: A band notched CPW UWB filter backed by rectangular rings is proposed. Initially, cascading of aperture-backed second-order microstrip filters is done to achieve the UWB passband. Later, to take advantage of the CPW geometry, the filter is converted to CPW configuration with rings at the back to achieve sharp cutoff characteristics and a notch at 5.1 GHz.

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Low-insertion-loss hybridp-i-n diode switches inKu andKa bands

Cited by 4 publications

References 11 publications

Polarization Reconfigurable Slot-Fed Cylindrical Dielectric Resonator Antenna

Polarization Reconfigurable Slot-Fed Cylindrical Dielectric Resonator Antenna

An absorptive bandpass‐integrated p‐i‐n diode T/R switch for 2.5 GHz WiMAX high power terminals

A band‐rejection type RF switch based on a dual‐mode microstrip ring resonator

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