Design and analysis of compact MMIC switches utilising GaAs pHEMTs in 3D multilayer technology

Abstract

In this paper, we demonstrate for the first time the implementation of 3-Dimensional (3D) multilayer technology on GaAsbased pseudomorphic high electron mobility transistor (pHEMT) switches. Two types of pHEMT switches are considered, namely single-pole single-throw (SPST) and single-pole double-throw (SPDT). The design and analysis of the devices are demonstrated first through a simulation of the industry-recognised standard model, TriQuint's Own Model -Level 3 (TOM3), developed by TriQuint Semiconductor, Inc. From the simulation analysis, three optimised SPST and SPDT pHEMT switches which can address applications ranging from L to X bands, are fabricated and tested. The performance of the pHEMT switches using multilayer technology are comparable to those of the current state-of-the-art pHEMT switches, while simultaneously offering compact circuits with the advantages of integration with other MMIC components.

Investigation and design methods of a compact patch antennas using 3-D MMIC for various applications

“…The design of the 3D MMIC is based on coplanar waveguide (CPW), in this design, the signal is protected by the two grounds on both sides, the circuit becomes more compact, cost-effective and improved performance. The integration of 3D MMIC based devices ae already reported for diode [18], pHEMT [19], Limiter [20], and switch [21].…”

Uniformity investigation of pHEMTs small-signal parameters for pre and post multilayer fabrication in 3D MMICs

“…The active and passive elements are integrated by opening Si 3 N 4 windows of the pre-fabricated pHEMTs thus the sandwiching (metal and dielectric) layers can be reposed to develop multilayer MMICs [4]. This would reduce the overall chip size for pHEMT diode [5], limiter [6], switch [7], pHEMT Amplifiers [8], CPW transmission line [9,10], somewhat all the components are organized in stacks. The device performance of multilayer components can be improved by using V-shaped transmission lines in the vertical arrangement configuration [11] to connect the active and passive components in place of thin-film CPW transmission lines.…”