A method for determination of depletion width of single and double gate junction less transistor

Sarma, Kaushik Chandra Deva; Sharma, Sweta

doi:10.1109/edcav.2015.7060550

Cited by 6 publications

(3 citation statements)

References 7 publications

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“…[107][108][109][110][111][112][113] A higher sensitivity device is always desirable for both in-vivo and in-vitro systems. Several factors influence the sensitivity of a pH ISFET, including biorecognition layer and the transducer, 7 sensing channel material, 8 resident of hydroxyl group, measuring process and time, 114 processing parameters such as gas flow ratio, 115 fabrication process, 8,[114][115][116][117][118][119] pH sensor and interface unit, 117 parasitic effects (transconductance), 118 total surface-site density (N S ), 34,120,121 presence of oxygen on the surface and hydrogen content in silicon nitride sensitive films, 122 annealing conditions, 115,123 dielectric constant, 123,124 biasing regime of sensors and electrostatic screening of the analyte charges, 125 leakage current, 126,127 drift, 101,[128][129][130] depletion width, 131 capacitance of floating diffusion (FD), 132 scale length with gate oxide thickness. 133 In addition to the aforementioned factors, there are several challenges commonly encountered during experiments.…”

Section: Review Of Literaturementioning

confidence: 99%

Review–Silicon Based ISFETs: Architecture, Fabrication Process, Sensing Membrane, and Spatial Variation

Gupta,

Sharma,

Goswami

2024

ECS J. Solid State Sci. Technol.

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The main characteristics of a good pH detecting system are higher sensitivity, ease of manufacturing process, and a micro-system. Ion sensitive field effect transistors (ISFETs), which are frequently employed as biosensors, offer significant advantages, and have gained prominence in various sectors. This review has highlighted the factors influencing sensitivity in pH sensing and explored various methods to enhance the sensor’s sensitivity and overall performance. Miniature sensors play a crucial role, especially in industries, biomedical and environmental applications. For accurate pH measurements in both in-vivo and in-vitro systems, as well as for the device’s miniaturization, the reference electrode (RE) must be positioned precisely in an ISFET device, considering both the device’s physical dimensions and the distance between the sensing surface and the RE. Hence, this review provides valuable insights into the importance of sensitivity, miniaturization, and the role of the RE in ISFET devices, contributing to the advancement and application of pH sensing technology indiverse fields.

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Section: Review Of Literaturementioning

confidence: 99%

Review–Silicon Based ISFETs: Architecture, Fabrication Process, Sensing Membrane, and Spatial Variation

Gupta,

Sharma,

Goswami

2024

ECS J. Solid State Sci. Technol.

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“…Where, W d is the depletion width, W is the device width, ΔL is the length of one segment, μ is the mobility, n is the carrier concentration and q is charge of one electron. The depletion width can be given as [20],…”

Section: Drain Current Modelling Of the Proposed Techniquementioning

confidence: 99%

A method for reduction of off state leakage current in symmetric DG JLT

Sarma

Sharma

2019

Eng. Res. Express

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A novel method for reduction of off state leakage current in a symmetric double gate junctionless transistor (DG JLT) is presented in this paper. In this technique a layer of dielectric has been placed at centre of the JLT. As major portion of leakage current flows through the centre, placing a dielectric at the centre will reduce the leakage current to large extent. An analytical model of drain current and threshold voltage for the proposed structure is developed. The model is validated by comparing it with simulation results obtained from TCAD (Technology Computer Aided Design). The model is in close agreement with TCAD results. The model as well as simulation results show that the JLT with dielectric layer placed at the centre has lower subthreshold current compared to the conventional JLT.

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“…In order to provide an analytical formula, which describes the operation of a JLT, some researchers have proposed introducing a few simplistic assumptions. Among the others, the complete depletion assumption is the most significant hypothesis that allows for extracting an approximated analytical formula for the depletion region width [12,[16][17][18][19]. Although this approximated model have been mentioned and utilized in numerous scientific articles, its accuracy was never formally analyzed, at least to the best knowledge of the authors.…”

Section: Introductionmentioning

confidence: 99%

Analysis of an Approximated Model for the Depletion Region Width of Planar Junctionless Transistors

et al. 2019

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In this paper, we investigate the accuracy of the approximated analytical model currently utilized, by many researchers, to describe the depletion region width in planar junctionless transistors (PJLT). The proposed analysis was supported by numerical simulations performed in COMSOL Multiphysics software. By comparing the numerical results and the approximated analytical model of the depletion region width, we calculated that the model introduces a maximum RMS error equal to 90 % of the donor concentration in the substrate. The maximum error is achieved when the gate voltage approaches the threshold voltage ( V t h ) or when it approaches the flat band voltage ( V F B ) of the transistor. From these results, we concluded that this model cannot be used to determine accurately the flat-band and the threshold voltage of the transistor, although it represents a straightforward method to estimate the depletion region width in PJLT. By using the approximated analytical model, we extracted an analytical formula, which describes the electron concentration at the ideal boundary of the depletion region. This formula approximates the numerical data extracted from COMSOL with a relative error lower than 1 % . The proposed formula is in our opinion, as useful as the formula of the approximated analytical model because it allows for estimating the position of the depletion region also when the drain and source terminals are not grounded. We concluded that the analytical formula proposed at the end of this work could be useful to determine the position of the depletion region boundary in numerical simulations and in graphical representations provided by COMSOL Multiphysics software.

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A method for determination of depletion width of single and double gate junction less transistor

Cited by 6 publications

References 7 publications

Review–Silicon Based ISFETs: Architecture, Fabrication Process, Sensing Membrane, and Spatial Variation

Review–Silicon Based ISFETs: Architecture, Fabrication Process, Sensing Membrane, and Spatial Variation

A method for reduction of off state leakage current in symmetric DG JLT

Analysis of an Approximated Model for the Depletion Region Width of Planar Junctionless Transistors

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