A Highly Reliable 3-D Integrated SBT Ferroelectric Capacitor Enabling FeRAM Scaling

Scaling potential of pin-type 3-D SBT ferroelectric capacitors integrated in 0.18μm CMOS technology

“…However, despite the incomplete sidewall contribution to the polarization, 2P r $ 20 lC/cm 2 is achievable for 3-D capacitor arrays. This is higher than the obtained value for FeCAP implemented in a 0.35 lm technology [3], thanks to the increased sidewall proportion in the capacitor area. Also, the P r value extracted from hysteresis loops measured for sweeping from À3 to 3 V is only 10% lower than the P r values obtained for sweeping from À5 to 5 V, showing good saturation properties at 3 V. Hence, both the 3-D effect on P r and the saturation quality at 3 V confirm the positive scaling ability of this 3-D cell, as predicted in [3].…”

“…We have also evidenced elsewhere that these 3-D cells have higher remnant polarization than 2-dimensional (2-D) cells while reliability properties remain as excellent [3].…”

“…In this article, we report on electrical and reliability characteristics of our 3-D FeCAP integrated in 0.18 lm technology up to metal interconnection. We first show that the polarization gain from 2-D to 3-D cell configuration is more important than previously reported in a 0.35 lm technology, due to increased sidewall contribution to the signal [3], and then we present reliability characteristics of the cells. Based on these excellent properties, we finally discuss key integration parameters for further scaling of the concept.…”

Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

“…Leading contenders currently include phase change memory, magnetic random access memory, ferroelectric random access memory, and resistive random access memory (RRAM). [4][5][6][7] RRAM technologies are of particular interest due to its high density, low cost, low power consumption, fast switching speed, and simple cell structure (ideally a cross-bar architecture). [8][9][10] RRAM based on silicon oxide (SiO x ) stands out among other RRAM because it has a unique unipolar operation mode, high on/off ratio, excellent scalability, good high temperature performance, and compatibility with standard CMOS technology.…”

Radiation effects on switching kinetics of three-dimensional ferroelectric capacitor arrays

“…Recently, usual planar ͑two-dimensional͒ integrated ferroelectric capacitors were replaced by three-dimensional ͑3D͒ capacitors. 7 This innovative geometry enables the fabrication of highly reliable FeRAMs with improved sensing signal due to the additional electrical contribution of capacitor sidewalls. The selected ferroelectric material was Sr 0.8 Bi 2.2 Ta 2 O 9 ͑SBT͒, presenting high resistance to fatigue and negligible imprint.…”