Radiation effects on switching kinetics of three-dimensional ferroelectric capacitor arrays

Courtade, L.; Müller, Christophe; Andreoli, G.; Turquat, Ch.; Goux, L.; Wouters, Dirk J.

doi:10.1063/1.2339044

Cited by 9 publications

(13 citation statements)

References 18 publications

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“…Imprint could result from elevated temperatures due to asymmetric migration of species along the film, exposure to UV light or x-rays 17 as well as asymmetric film-electrode top and bottom interfaces. 18 While the exact mechanisms of imprint are not known, there is strong experimental evidence that it results from trapped charges, charged defects, and other possible defect dipole complexes, surface fields, and stress gradients.…”

Section: Introductionmentioning

confidence: 99%

“…Deposition conditions of thin film materials are often far from ideal and hence kinetic factors play an important role in the ultimate stoichiometry of the film. [18][19][20][21] As perovskite FEs have a mix of ionic and covalent interatomic bonding, local deviations from the exact stoichiometry can create frozen dipoles and electrostatic fields emanating from these complexes. Furthermore, it has often been discussed that these "defects" can then trap carriers and become p-or n-type centers.…”

Section: Introductionmentioning

confidence: 99%

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Asymmetric hysteresis loops and smearing of the dielectric anomaly at the transition temperature due to space charges in ferroelectric thin films

Misirlioglu

Okatan

Alpay

2010

Journal of Applied Physics

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Ferroelectric thin films often exhibit a displacement of the polarization versus the electric field hysteresis loops, particularly along the electric field axis. This shift is typically attributed to structural and electronic asymmetry of the film-electrode interfaces, asymmetric surface fields, as well as space charge regions. In this study, we analyze the effect of a spatial, continuous distribution of space charge on the hysteresis response and phase transition characteristics of epitaxial ͑001͒ PbZr 0.3 Ti 0.7 O 3 thin films sandwiched between metallic electrodes on ͑001͒ SrTiO 3 substrate. Using a nonlinear thermodynamic model, we compute numerically the internal electrical fields and polarizations for several different space charge distributions both in the presence of a triangular external electric field and as a function of temperature at zero applied field. We show that space charge accumulated near the metal-ferroelectric interfaces can dramatically displace the hysteresis along the electric field axis such that the otherwise symmetric coercive fields E C − and E C + in a bulk ferroelectric related to each other through ͉E C −͉ = E C + may shift depending on the space charge concentration in such a manner that both E C − , E C + Ͼ 0 or E C − , E C + Ͻ 0. This gives rise to a very strong imprint. Our findings reveal that the presence of space charges in ferroelectric thin films results in significant changes in the phase transition characteristics, including a reduction in the phase transition temperature, smearing of the transition over a temperature range instead of a sharp dielectric anomaly at the bulk Curie temperature, and a reduction in the dielectric response compared to defect-free ferroelectrics of the same composition.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Asymmetric hysteresis loops and smearing of the dielectric anomaly at the transition temperature due to space charges in ferroelectric thin films

Misirlioglu

Okatan

Alpay

2010

Journal of Applied Physics

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“…[1][2][3][4] Recently, intensive experimental research works have been carried out to investigate radiation effects on ferroelectric thin films and ferroelectric-based devices. [5][6][7][8][9][10][11] Good application potentials of ferroelectrics in highly reliable and radiation-hardened memories were reported in these works. Although the remanent polarization was found much more robust than the floating gate stored charge, 11) radiation-induced degradations (e.g., polarization loss, fatigue, and imprint) in ferroelectric thin films were still observed.…”

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confidence: 84%

Modeling and simulation of ionizing radiation effect on ferroelectric field-effect transistor

Yan¹,

Li²,

Guo³

et al. 2016

Jpn. J. Appl. Phys.

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A theoretical model is developed to investigate the ionizing radiation effect on electrical characteristics of a metal–ferroelectric–insulator–semiconductor structure ferroelectric gate field-effect transistor (MFIS FeFET). Modeling results show that gate capacitance versus gate voltage curves and transfer characteristic curves shift significantly and the memory window becomes worse with the total dose. Moreover, the drain current and I ON/I OFF ratio exhibit a considerable decrease under high incident dose rates. Finally, it is found that radiation-induced degradations can be affected strongly by the insulator layer thickness, and that MFIS FeFETs with a thin insulator buffer layer show a high radiation tolerance.

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“…Recently, intensive experimental research has been performed to investigate the radiation effect of ferroelectric thin films. [5][6][7][8][9][10][11][12][13][14][15][16][17] For example, Menou et al 8 had demonstrated that the electrical characteristics of Pt/SrBi 2 Ta 2 O 9 (SBT)/Pt ferroelectric capacitor changed significantly during or after irradiation. In their work, both "fatigue-like" (polarization reduction) and/or "imprint-like" (voltage shift) phenomena were observed.…”

mentioning

confidence: 99%

“…In their work, both "fatigue-like" (polarization reduction) and/or "imprint-like" (voltage shift) phenomena were observed. Then, Courtade et al 10 showed that high dose of x rays can accelerate fatigue-like and/or imprint mechanisms that may perturb normal "written" or "writing" operations in memory. Later, Petrov et al 13 indicated that a certain wavelength of ultraviolet radiation can induce significant leakage current in Ba 0.3 Sr 0.7 TiO 3 thin film capacitors.…”

mentioning

confidence: 99%

Impact of total ionizing dose irradiation on electrical property of ferroelectric-gate field-effect transistor

Yan

Xiong

Tang

et al. 2014

Journal of Applied Physics

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Articles you may be interested inInfluence of Ti substitution on the electrical properties of metal-ferroelectric (BiFeO3)-insulator (HfO2)-silicon structures for nonvolatile memory applications The electrical and switching properties of a metal-ferroelectric ( Bi 3.15 Nd 0.85 Ti 3 O 12 ) -insulator ( Y 2 O 3stabilized ZrO 2 )-silicon diode Appl. Phys. Lett. 97, 103501 (2010); 10.1063/1.3486464Characterization of Pt / Bi 3.15 Nd 0.85 Ti 3 O 12 / HfO 2 / Si structure using a hafnium oxide as buffer layer for ferroelectric-gate field effect transistors P-type channel metal-ferroelectric-insulator-silicon field-effect transistors (FETs) with a 300 nm thick SrBi 2 Ta 2 O 9 ferroelectric film and a 10 nm thick HfTaO layer on silicon substrate were fabricated and characterized. The prepared FeFETs were then subjected to 60 Co gamma irradiation in steps of three dose levels. Irradiation-induced degradation on electrical characteristics of the fabricated FeFETs was observed after 1 week annealing at room temperature. The possible irradiation-induced degradation mechanisms were discussed and simulated. All the irradiation experiment results indicated that the stability and reliability of the fabricated FeFETs for nonvolatile memory applications will become uncontrollable under strong irradiation dose and/or long irradiation time. V C 2014 AIP Publishing LLC. [http://dx.

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Radiation effects on switching kinetics of three-dimensional ferroelectric capacitor arrays

Cited by 9 publications

References 18 publications

Asymmetric hysteresis loops and smearing of the dielectric anomaly at the transition temperature due to space charges in ferroelectric thin films

Asymmetric hysteresis loops and smearing of the dielectric anomaly at the transition temperature due to space charges in ferroelectric thin films

Modeling and simulation of ionizing radiation effect on ferroelectric field-effect transistor

Impact of total ionizing dose irradiation on electrical property of ferroelectric-gate field-effect transistor

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