A highly efficient 3.5 GHz inverse class-F GaN HEMT power amplifier

Saad, Paul; Fager, Christian; Cao, Haiying; Zirath, Herbert; Andersson, Kristoffer

doi:10.1017/s1759078710000395

Cited by 14 publications

(12 citation statements)

References 22 publications

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“…Although good agreement between simulation and measurement results are obtained, the discrepancy at high power may be related to the self-heating in the device. At low output power, the differences between simulated and measured performance may be related to the switch mode operation of the model [26][27][28].…”

Section: Cw Performancementioning

confidence: 99%

Effect of Second and Third Harmonic Input Impedances in a Class-F Amplifier

Abbasian¹,

Johnson²

2015

PIER C

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Abstract-In this paper, the design of a class-F radio frequency power amplifier with a multiharmonic input transmission line network is presented. Harmonic signal components at the gate come from several sources including nonlinear device capacitances and imperfect output harmonic terminations that create harmonic components that are fed back to the gate through the gate-drain capacitance. The effect of these harmonic generation mechanisms and the potential to shape the gate waveform to improve power efficiency are investigated. The study shows that a second harmonic short is most beneficial and the effect of a third harmonic termination is less significant. The concepts are applied to the design of a 10 W GaN class-F amplifier and the design is supported by theoretical, simulation and experimental results. The fabricated design has a measured drain efficiency of 78.8% at an output power of 40.5 dBm for a frequency of 990 MHz. The amplifier was also tested with a 8.8 dB peak-to-average power ratio 5 MHz WCDMA signal. With the modulated signal, the adjacent channel power ratio was −33.1 dBc at a drain efficiency of 46.1% without predistortion correction.

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Section: Cw Performancementioning

confidence: 99%

Effect of Second and Third Harmonic Input Impedances in a Class-F Amplifier

Abbasian¹,

Johnson²

2015

PIER C

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“…Measurements were then performed using the class F −1 PA published in [13]. This PA has a peak power added efficiency (PAE) of 78% at 3.5 GHz.…”

Section: A Prerequisitesmentioning

confidence: 99%

“…Fig. 9 shows such an example where a static power sweep performed on a class F −1 GaN amplifier [27] is used, in combination with an SNR calculation based on simulation using a data record of 10 6 samples generated as stated in the prerequisites. The result is compared to the ideal class B based efficiency estimate, η B from (37), and the SNR estimate, SNR est from (42).…”

Section: B Simulationsmentioning

confidence: 99%

“…The trade-off between cancellation signal bandwidth (BW c ), switching frequency, and efficiency is investigated theoretically and verified with experimental results using an existing high efficiency 3.5 GHz GaN class F −1 power amplifier [13]. Yet another trade-off introduced here, is that of limiting the range of the amplitude variations by means of clipping, which is known to cause spectral regrowth.…”

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confidence: 91%

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An RF Carrier Bursting System Using Partial Quantization Noise Cancellation

Gustavsson

Eriksson

Saad

et al. 2012

IEEE Trans. Circuits Syst. I

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Abstract-This paper introduces a novel method for bandpass cancellation of the quantization noise occurring in high efficiency, envelope pulsed transmitter architectures -or carrier bursting. An equivalent complex baseband model of the proposed system, including the ΣΔ-modulator and cancellation signal generation, is developed. Analysis of the baseband model is performed, leading to analytical expressions of the power amplifier drain efficiency, assuming the use of an ideal class B power amplifier. These expressions are further used to study the impact of key system parameters, i.e. the compensation signal variance and clipping probability, on the class B power amplifier drain efficiency and signal-to-noise ratio.The paper concludes with simulations followed by practical measurements in order to validate the functionality of the method and to evaluate the performance-trend predictions made by the theoretical framework in terms of efficiency and spectral purity.

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“…Other than the optimum fundamental terminations, the optimum magnitudes of the higher harmonic reflection coefficients are typically near to unity with different phases depending on the P A classes, e.g. class-J [2], class-F or inverse class-F [4][5]. With passive tuner setups these high reflection conditions equal to unity cannot be set due to losses introduced by the various components such as couplers, diplexers, cables and probes.…”

Section: Introductionmentioning

confidence: 99%

Active harmonic source-/load-pull measurements of AlGaN/GaN HEMTs at X-band frequencies

Maier

Carrubba

Quay

et al. 2014

83rd ARFTG Microwave Measurement Conference

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Active harmonic loadpull measurements investigation for a 1-mm AlGaN/GaN HEMT power transistor at X-Band frequencies are in this paper reported. The paper highlights the transistor performances in terms of maximum PAE, P(out) and Gain achieved at 8.7 GHz together with the application of a systematic source-/load-pull measurement procedure including wafer-mapping capability. The measurements were carried out using an active harmonic loadpull test sytem with four control loops. In particular, fundamental and second harmonic "loads" as well as second harmonic "source" terminations have been properly varied and optimized. The 1-mm GaN power device delivered very high efficiency of DE=71.2 % and PAE=66.1 % together with high P(out) and power gain of 35 dBm (3.2 W) and 11.5 dB, respectively

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A highly efficient 3.5 GHz inverse class-F GaN HEMT power amplifier

Cited by 14 publications

References 22 publications

Effect of Second and Third Harmonic Input Impedances in a Class-F Amplifier

Effect of Second and Third Harmonic Input Impedances in a Class-F Amplifier

An RF Carrier Bursting System Using Partial Quantization Noise Cancellation

Active harmonic source-/load-pull measurements of AlGaN/GaN HEMTs at X-band frequencies

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