This paper presents the design and implementation of an inverse class-F power amplifier (PA) using a high power gallium nitride high electron mobility transistor (GaN HEMT). For a 3.5 GHz continuous wave signal, the measurement results show state-of-the-art power-added efficiency (PAE) of 78%, a drain efficiency of 82%, a gain of 12 dB, and an output power of 12 W. Moreover, over a 300 MHz bandwidth, the PAE and output power are maintained at 60% and 10 W, respectively. Linearized modulated measurements using 20 MHz bandwidth long-term evolution (LTE) signal with 11.5 dB peak-to-average ratio show that −42 dBc adjacent channel power ratio (ACLR) is achieved, with an average PAE of 30%, −47 dBc ACLR with an average PAE of 40% are obtained when using a WCDMA signal with 6.6 dB peak-to-average ratio (PAR).
Abstract-This paper introduces a novel method for bandpass cancellation of the quantization noise occurring in high efficiency, envelope pulsed transmitter architectures -or carrier bursting. An equivalent complex baseband model of the proposed system, including the ΣΔ-modulator and cancellation signal generation, is developed. Analysis of the baseband model is performed, leading to analytical expressions of the power amplifier drain efficiency, assuming the use of an ideal class B power amplifier. These expressions are further used to study the impact of key system parameters, i.e. the compensation signal variance and clipping probability, on the class B power amplifier drain efficiency and signal-to-noise ratio.The paper concludes with simulations followed by practical measurements in order to validate the functionality of the method and to evaluate the performance-trend predictions made by the theoretical framework in terms of efficiency and spectral purity.
This paper presents the design, implementation, and experimental results of a highly efficient concurrent dual-band GaN-HEMT power amplifier at 1.8 GHz and 2.4 GHz. A bare-die approach, in conjunction with a harmonic source-pull/load-pull simulation approach, are used in order to design and implement the harmonically tuned dual-band PA.\ud
For a continuous wave output power of 42.3 dBm the measured gain is 12 dB in the two frequency bands; while the power added efficiency is 64% in both bands. Linearized modulated measurements, using concurrently 10MHz LTE and WiMAX signals, show an average PAE of 25% and and adjacent channel leakage ratio of -48 dBc and -47 dBc at 1.8 GHz and 2.4 GHz, respectively
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