“…In this model, R g is the gate resistance, R d is the drain resistance, R s is the source resistance, C gs is the gate-source capacitance, C gd is the gatedrain capacitance, g m is the transconductance ( g m = g mo ejωτ ), C jd is the drain junction capacitance, R b is the body resistance, g dso is the dc drain-source conductance because of channel length modulation in the saturation region, C ds is the depletion capacitance in the pinch-off region between the drain and the end of the channel, 5,6 R c is the inversion channel resistance in the saturation region, 5,6 and C box is the source-drain lateral coupling capacitance existing in the buried oxide region. 7 In the high-frequency (HF) region of Figure 2, the series resistances are extracted to be R d = 1.73 Ω, R g = 5.43 Ω, and R s = 4.17 Ω at V ds = V gs = 0 V using y-intercepts of ((1)-(3)) vs ω −2 , respectively 8 :…”