SPICE modeling for RF kink effect in body contacted PD‐SOI nMOSFETs

Abstract

In order to simulate anomalous RF kink effect where S21‐ and S22‐parameters in high‐resistivity partially depleted silicon‐on‐insulator MOSFETs with body contact rotate clockwise in the lower and upper semicircles of Smith chart, respectively, a new SPICE BSIMSOI4 macro model including empirical voltage‐dependent equations of current sources, inductance, capacitance, and resistance has been proposed. The accuracy of the empirical model is verified in the wide voltage range by comparing it with measured S‐parameters from 0.01 to 15 GHz.