For the first time, the low-frequency kink phenomenon in the S 11-parameter of standard MOSFETs fabricated without any degradation of RF performances that exists in previous works is reported and its dependence on the gate finger number is analysed. The kink phenomenon is notable only for wide total gate width devices that show abrupt increase of a negative phase angle of the S 11-parameter in the low-frequency region, because of a widening space between adjacent resistance circles in the Smith chart. This phase increase originated from a quadratic increase of the low-frequency input capacitance against the gate finger number due to a constant load impedance for the S 11-parameter measurement.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.