Analysis of kink phenomenon in S ₁₁ ‐parameter of standard RF MOSFETs

Abstract

For the first time, the low-frequency kink phenomenon in the S 11-parameter of standard MOSFETs fabricated without any degradation of RF performances that exists in previous works is reported and its dependence on the gate finger number is analysed. The kink phenomenon is notable only for wide total gate width devices that show abrupt increase of a negative phase angle of the S 11-parameter in the low-frequency region, because of a widening space between adjacent resistance circles in the Smith chart. This phase increase originated from a quadratic increase of the low-frequency input capacitance against the gate finger number due to a constant load impedance for the S 11-parameter measurement.

Roll‐to‐Roll Patterning of Indium‐Tin‐Oxide Electrodes Using a Low‐Cost Laser‐Marking Machine

“…Our research group has previously published the results on a vacuum pressure sensor using van der Waals forces. [28][29][30] One of the challenges in this research was determining the correlation between the coating area and sensor sensitivity. As the sensor was fabricated by coating the reduced graphene oxide or single-wall carbon nanotubes (SWCNTS) on the electrodes using a "lift-off" method, the pattern area of the masking tape was considerably wider than the electrode gaps, making it difficult to measure the sensor sensitivity according to the sensor area.…”