Abstract:A high resistivity PD‐SOI MOSFET equivalent circuit model including a parallel connection of intrinsic output capacitance and conductance with frequency‐dependent empirical equations is newly proposed to accurately simulate their abrupt change in the low‐frequency region. This new empirical model is superior to a conventional RC one, because equivalent circuit structure and parameter extraction process are simpler. Better agreements with measured Y22‐parameter are obtained for the new model than the convention… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.