A compendium of recent total dose data on bipolar linear microcircuits

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Different part types of linear bipolar technology were irradiated in order to evaluate the ability of accelerated total dose testing to describe the tolerance at very low dose rate. On all tested types, the bias current was the most sensitive parameter. Results confirm that elevated temperature irradiation performed at high dose rate is well adapted to define the tolerance of the bias current at very low dose rate. The best accelerated test conditions correspond to a dose rate of 0.55 rad/s and irradiation temperature of 100 C. However, such a procedure is not applicable to determine the behavior of the offset parameters at low dose rate.

Section: Op470contrasting

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Evaluation of accelerated total dose testing of linear bipolar circuits

Carrière

Ecoffet

Poirot³

2000

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“…The TDE, especially in lateral and substrate pnp transistors, will result in continued degradation following irradiation, both from the transport of holes and the slow buildup of interface traps. Since the discovery o f the enhanced low-dose-rate sensitivity (ELDRS) in bipolar linear technologies, there have been many papers on the ELDRS effect in transistors [5-81 and circuits [9-151. Several papers have addressed ELDRS in voltage regulators, including the LM137 (negative) and the LM117 (positive) adjustable regulators [9,10,12,15]. Also, hardness assurance test methods have been presented for bounding the low-doserate response [16].…”

Section: Introductionmentioning

confidence: 99%

Enhanced low-dose-rate sensitivity of a low-dropout voltage regulator

Pease¹,

McClure

Gorelick

et al. 1998

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Ionization-induced degradation of the 29372 low-dropout voltage regulator is most severe at low-dose-rate (-10 mrad(Si02)/s) and zero load current. The most sensitive parameter is the maximum output drive current, which is a function of the gain of the large lateral pnp output transistor. Significant degradation of this parameter occurs at 5-10 krad(Si0') at low-dose-rate. A moderate load current (-250 mA) during irradiation significantly mitigates the damage. The mitigation of the damage is proportional to irradiation load current and is not a strong function of irradiation temperature or input voltage. The mechanism for the mitigation of damage appears to be current density dependent passivation of interface andfor border traps by mobile hydrogen-related species. The worst-case space system application is in unbiased spares.

“…Similar to the analysis presented for the first-order BGR, the current in Fig. 3 can then be expressed as (7) Using (6) and (7) in (4), the output voltage of the compensated BGR can be written as (8) Assuming identical base currents for all the transistors, (8) can finally be simplified to (9) Equation (9) shows that any change in the base current after irradiation results in almost a shift in the magnitude of the output voltage in the compensated BGR than in the first-order BGR. Also note that the value of resistor used in the compensated BGR is twice as large as the one used in the first-order BGR.…”

Section: Discussionmentioning

confidence: 99%

“…The degradation of analog circuits due to irradiation has been previously investigated in [2]- [10]. Most of these studies have only considered Si bipolar junction transistor (Si BJT) circuits [2]- [8]. Proton radiation response of SiGe circuits was investigated in [9], [10] and showed only minor changes in the SiGe BGR performance up to total ionization dose (TID) of 3 Mrad(Si).…”

mentioning

confidence: 99%

A Comparison of the Effects of X-Ray and Proton Irradiation on the Performance of SiGe Precision Voltage References

Najafizadeh

Sutton

Diestelhorst

et al. 2007

A comprehensive investigation of the performance dependencies of irradiated SiGe precision voltage reference circuits on 1) total ionizing dose (TID), 2) circuit topology, and 3) radiation source is presented. Two different bandgap voltage references were designed using a first-generation (50-GHz) SiGe BiCMOS technology platform, and subsequently exposed to X-rays at doses of 1080 krad(SiO 2 ) and 5400 krad(SiO 2 ). The degradation in circuit performance following X-ray irradiation depends on both the TID level and the chosen circuit topology. Measurement results show that large TID levels can significantly shift the magnitude of the output voltage. Explanations for the observed shifts are provided by utilizing detailed analyses of the two circuit topologies and considering device-to-circuit interactions. The primary factor responsible for the difference in the circuit response before and after irradiation can be attributed to the excess base leakage current in the SiGe HBT. To investigate the impact of radiation source, the circuit topology showing the worst-case degradation from the X-ray experiment was independently exposed to 63-MeV protons at the same effective TID level. A clear source dependence in the circuit response was observed, and possible origins of this behavior are identified.