Ionization-induced degradation of the 29372 low-dropout voltage regulator is most severe at low-dose-rate (-10 mrad(Si02)/s) and zero load current. The most sensitive parameter is the maximum output drive current, which is a function of the gain of the large lateral pnp output transistor. Significant degradation of this parameter occurs at 5-10 krad(Si0') at low-dose-rate. A moderate load current (-250 mA) during irradiation significantly mitigates the damage. The mitigation of the damage is proportional to irradiation load current and is not a strong function of irradiation temperature or input voltage. The mechanism for the mitigation of damage appears to be current density dependent passivation of interface andfor border traps by mobile hydrogen-related species. The worst-case space system application is in unbiased spares.

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We investigate model dependence of bounding estimates or TIO degradation as a function of sample size and statistical model and develop a method for selecting the model with greatest predictive power.

Abstruct-We present statistical techniques for evaluating random and systematic errors for use in flight performance predictions for large flight lots and ultra-high reliability applications.