A 60-GHz SiGe Radiometer Calibration Switch Utilizing a Coupled Avalanche Noise Source

Coen, Christopher T.; Frounchi, Milad; Lourenco, Nelson E.; Cheon, Clifford D.; Williams, Wyman; Cressler, John D.

doi:10.1109/lmwc.2020.2975735

Cited by 20 publications

(4 citation statements)

References 9 publications

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“…The avalanche noise diode is commonly used for the noise source design [12][13][14][15][16]. We selected a Noisecom NC302L because of its relatively low avalanche voltage (less than +8 V) and beam lead packaging convenient for integration into an LNA [17].…”

Section: Circuit Design Descriptionmentioning

confidence: 99%

Temperature Compensated Internal LNA Noise Calibration Source

Shi

Weinreb

2021

IEEE Microw. Wireless Compon. Lett.

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In this letter, a new temperature compensated internal LNA noise calibration source for system temperature monitoring is presented. It is easily integrated into amplifiers and has a negligible impact on the noise performance. The power level of the proposed calibration source is temperature compensated by a negative temperature coefficient (NTC) thermistor varying the bias voltage of the noise diode. The measured variation of the compensated calibration level is only 0.5 K for 34 K calibration level at 1.4 GHz in a temperature range from -40 C to +40 C. This internal noise calibration source is controlled by the detection of a tone signal applied on the RF output cable thus requiring no additional wiring to the amplifier. The designed noise calibration source provides monitoring of system noise temperature without the additional noise and cost of a directional coupler between ambient-temperature LNA and antenna.

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Section: Circuit Design Descriptionmentioning

confidence: 99%

Temperature Compensated Internal LNA Noise Calibration Source

Shi

Weinreb

2021

IEEE Microw. Wireless Compon. Lett.

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“…Compared to GaAs and GaN processes, the SiGe BiCMOS technologies are capable for higher integration and lower power consumption, which is crucial for portable devices with compact size. Various solid-state circuits have been implemented in SiGe technologies [1][2][3][4], such as the CML divider (Current Mode Logic divider) [5], transimpedance amplifier [6], voltage-controlled oscillators (VCOs) [7], bandpass filter [8], and switch [9]. Including the above various blocks based on the SiGe BiCMOS process, they have been widely used in various sub-THz systems, including radar receivers [10], 5G transceiver [11], and high-resolution imaging device [12].…”

Section: Introductionmentioning

confidence: 99%

A 130-to-220-GHz Frequency Quadrupler with 80 dB Dynamic Range for 6G Communication in 0.13-μm SiGe Process

Cao

et al. 2022

Electronics

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This paper presents a broadband frequency quadrupler (FQ) implemented with a standard 130-nm SiGe BiCMOS process. Two broadband push-push frequency doublers (×2) operate at an input frequency of 32.5–55 GHz and 65–110 GHz, respectively. To properly drive the two doublers with enough input power and bandwidth, two transformer coupled power amplifiers (PAs) have been adopted. The former power amplifier is based on a neutralized capacitor structure and the latter is based on a transformer topology. A nonlinear device model and a systematic methodology to generate maximum power at second harmonic are proposed. By manipulating the device nonlinearity and optimizing the magnetically and capacitively coupled resonator (MCCR) matching networks, optimum conditions for harmonic power generation are provided. The measurement results show that the proposed quadrupler provides a 90-GHz bandwidth with an 80-dB dynamic range and a high energy efficiency η of 3.7% at 210 GHz.

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“…To this purpose the noise diode is coupled to the receiver input in such a way as to inject a known amount of noise power [6], and the above measurements are based on the Y-factor method [7]. Such an approach is quite similar to those adopted for the calibration of radio astronomy receivers and microwave radiometers [8]- [11] and, recently, has been applied to a fully integrated 60 GHz radiometer fabricated in SiGe BiCMOS technology [12]. Finally, noise diodes could be used in cryptography BITEs to realize high-speed true random numbers generators [13].…”

Section: Introductionmentioning

confidence: 99%

“…The study was refined in 2020 both in terms of experiments and modeling, achieving a record ENR of 20 dB in a frequency range up to 260 GHz [23]. Finally, in 2020, another avalanche noise source is demostrated using the collector-base junction of a SiGe Heterojunction Bipolar Transistor (HBT) in a 130-nm SiGe BiCMOS process [12]. This device attains a 18.7 dB ENR at 60 GHz.…”

Section: Introductionmentioning

confidence: 99%

Millimeter-Wave Avalanche Noise Sources Based on p-i-n Diodes in 130 nm SiGe BiCMOS Technology: Device Characterization and CAD Modeling

et al. 2020

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Integrated noise sources (or hot loads) are essential to enable precise gain and noise figure Built-In Test Equipment (BITE) measurements. The present paper describes a millimeter-wave, solid-state noise source implemented in a standard, 130-nm Silicon-Germanium (SiGe) Bipolar-Complementary Metal Oxide Semiconductor (BiCMOS) process. This device is based on a p-in (varactor) diode that has two states: a cold state, when it is off, and an hot state when the diode is driven into avalanche breakdown. Two noise diodes with 10 and 20 square microns area have been fabricated and experimentally characterized. The measurements highlight a breakdown voltage is close to 10.7 V, whereas Excess Noise Ratio (ENR) equal to 16 dB (10 square microns diode) and 19 dB (20 square microns diode) are observed at 40 GHz, for a current density of 0.1 mA per square micron. For the first time the ENR is studied as a function of the physical device temperature, showing a slight decrease of-0.008 dB/K as the temperature increases from 298 to 358 K. An accurate modeling of the noise source is finally provided through a small-signal equivalent circuit that can be easily implemented into Computer Aided Design (CAD) tools. This contains some modifications with respect to the original Gliden and Hines model. The obtained results enable the employment of p-in avalanche noise diodes for the automatic characterization of integrated circuits in the production environment, as well as for the calibration of millimeter-wave receivers and radiometers during their operational life. INDEX TERMS microwave noise sources, avalanche noise, noise diodes, Built-In Test Equipment (BITE).

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A 60-GHz SiGe Radiometer Calibration Switch Utilizing a Coupled Avalanche Noise Source

Cited by 20 publications

References 9 publications

Temperature Compensated Internal LNA Noise Calibration Source

Temperature Compensated Internal LNA Noise Calibration Source

A 130-to-220-GHz Frequency Quadrupler with 80 dB Dynamic Range for 6G Communication in 0.13-μm SiGe Process

Millimeter-Wave Avalanche Noise Sources Based on p-i-n Diodes in 130 nm SiGe BiCMOS Technology: Device Characterization and CAD Modeling

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