Millimeter-Wave Avalanche Noise Sources Based on p-i-n Diodes in 130 nm SiGe BiCMOS Technology: Device Characterization and CAD Modeling

Abstract

Integrated noise sources (or hot loads) are essential to enable precise gain and noise figure Built-In Test Equipment (BITE) measurements. The present paper describes a millimeter-wave, solid-state noise source implemented in a standard, 130-nm Silicon-Germanium (SiGe) Bipolar-Complementary Metal Oxide Semiconductor (BiCMOS) process. This device is based on a p-in (varactor) diode that has two states: a cold state, when it is off, and an hot state when the diode is driven into avalanche breakdown. Two noise diodes with 10 and 20 square microns area have been fabricated and experimentally characterized. The measurements highlight a breakdown voltage is close to 10.7 V, whereas Excess Noise Ratio (ENR) equal to 16 dB (10 square microns diode) and 19 dB (20 square microns diode) are observed at 40 GHz, for a current density of 0.1 mA per square micron. For the first time the ENR is studied as a function of the physical device temperature, showing a slight decrease of-0.008 dB/K as the temperature increases from 298 to 358 K. An accurate modeling of the noise source is finally provided through a small-signal equivalent circuit that can be easily implemented into Computer Aided Design (CAD) tools. This contains some modifications with respect to the original Gliden and Hines model. The obtained results enable the employment of p-in avalanche noise diodes for the automatic characterization of integrated circuits in the production environment, as well as for the calibration of millimeter-wave receivers and radiometers during their operational life. INDEX TERMS microwave noise sources, avalanche noise, noise diodes, Built-In Test Equipment (BITE).

Temperature Compensated Internal LNA Noise Calibration Source

“…The avalanche noise diode is commonly used for the noise source design [12][13][14][15][16]. We selected a Noisecom NC302L because of its relatively low avalanche voltage (less than +8 V) and beam lead packaging convenient for integration into an LNA [17].…”

A 140 GHz to 170 GHz Active Tunable Noise Source Development in SiGe BiCMOS 55 nm Technology

“…Another solution can be the approach consisting in integrating a low noise amplifier (LNA) to have a constant output NS matching regardless of bias condition and higher ENR levels. Several works leveraging photodiodes [6], [7], NMOS transistors [8] or p-i-n diodes [9] showed conclusive results up to 40 GHz. In this work, the addressed frequency range is above 140 GHz.…”