This paper proposes a Ka-band receiver front-end for future CubeSats Low-Earth Orbit (LEO) to Geostationary (GEO) inter-satellite links. The receiver is able to support very high data rates (up to 100 Mbit/s) in Quadrature Phase-Shift Keying (QPSK) when in the line of sight of a GEO satellite that is equipped with a steerable 70-cm antenna and transmitting a 25-W signal. The originality of the proposed approach is twofold. First we will demonstrate the receiver feasibility based on a class of miniaturized and low-cost microwave integrated circuits, currently available on the market. In particular, our receiver is based on a novel combination of integrated Low-Noise Amplifiers (LNA) with an image rejection filter, the latter exploiting the Substrate Integrated Waveguide (SIW) technology. An optimization of the via placement proved to be able to reduce the need for shielding apparatuses, thus simplifying the mechanics and reducing mass, volume and hardware costs. Secondly, we will propose a noise injection circuit capable of measuring and calibrating the receiver gain, also during in-orbit operation. Self testing capabilities are particularly relevant for CubeSats because the usage of commercial components poses serious reliability issues.
Hybrid couplers are important devices that combine or divide signals in various microwave applications. Wideband performance, low losses and small size are key features in most modern radar and communication systems. This paper presents a new geometry for single-ridge, air-filled waveguide quadrature hybrid couplers at the X/Ku band on a single layer using multiple pairs of slots cut on a common ridge coupling section. Bandwidth can be progressively extended by increasing the number of slot pairs. Two designs characterized by compact size and state-of-the-art performance are proposed, leading to a fractional bandwidth up to 46.88% and a maximum dimension of 1.18 wavelengths. A tolerance analysis is presented to highlight the design robustness and reliability.
Integrated noise sources (or hot loads) are essential to enable precise gain and noise figure Built-In Test Equipment (BITE) measurements. The present paper describes a millimeter-wave, solid-state noise source implemented in a standard, 130-nm Silicon-Germanium (SiGe) Bipolar-Complementary Metal Oxide Semiconductor (BiCMOS) process. This device is based on a p-in (varactor) diode that has two states: a cold state, when it is off, and an hot state when the diode is driven into avalanche breakdown. Two noise diodes with 10 and 20 square microns area have been fabricated and experimentally characterized. The measurements highlight a breakdown voltage is close to 10.7 V, whereas Excess Noise Ratio (ENR) equal to 16 dB (10 square microns diode) and 19 dB (20 square microns diode) are observed at 40 GHz, for a current density of 0.1 mA per square micron. For the first time the ENR is studied as a function of the physical device temperature, showing a slight decrease of-0.008 dB/K as the temperature increases from 298 to 358 K. An accurate modeling of the noise source is finally provided through a small-signal equivalent circuit that can be easily implemented into Computer Aided Design (CAD) tools. This contains some modifications with respect to the original Gliden and Hines model. The obtained results enable the employment of p-in avalanche noise diodes for the automatic characterization of integrated circuits in the production environment, as well as for the calibration of millimeter-wave receivers and radiometers during their operational life. INDEX TERMS microwave noise sources, avalanche noise, noise diodes, Built-In Test Equipment (BITE).
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.