A 3-D X-Band T/R Module Package With an Anodized Aluminum Multilayer Substrate for Phased Array Radar Applications

Yeo, Sung–Ku; Chun, Joohwan; Kwon, Young–Se

doi:10.1109/tadvp.2010.2049109

Cited by 53 publications

(13 citation statements)

References 15 publications

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“…The transmit/receive (T/R) modules have attracted significant attention in recent years because of its importance in the practical target detection [51,52]. The power amplifier link is an important part of the T/R modules, which mainly consists of two parts: Microstrip and printed board.…”

Section: An Engineering Applicationmentioning

confidence: 99%

Uncertainty propagation analysis by an extended sparse grid technique

Jia

Jiang

et al. 2018

Front. Mech. Eng.

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In this paper, an uncertainty propagation analysis method is developed based on an extended sparse grid technique and maximum entropy principle, aiming at improving the solving accuracy of the high-order moments and hence the fitting accuracy of the probability density function (PDF) of the system response. The proposed method incorporates the extended Gauss integration into the uncertainty propagation analysis. Moreover, assisted by the Rosenblatt transformation, the various types of extended integration points are transformed into the extended Gauss-Hermite integration points, which makes the method suitable for any type of continuous distribution. Subsequently, within the sparse grid numerical integration framework, the statistical moments of the system response are obtained based on the transformed points. Furthermore, based on the maximum entropy principle, the obtained first four-order statistical moments are used to fit the PDF of the system response. Finally, three numerical examples are investigated to demonstrate the effectiveness of the proposed method, which includes two mathematical problems with explicit expressions and an engineering application with a black-box model.

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Section: An Engineering Applicationmentioning

confidence: 99%

Uncertainty propagation analysis by an extended sparse grid technique

Jia

Jiang

et al. 2018

Front. Mech. Eng.

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“…By integrating several functions such as phase and gain control, driver amplifiers, and switches on a single multi-function chip [2], the sharp problem can be solved. Packing the multi-function chip (MFC) for compact and low cost T/R modules has already been realized in a phased array system [3]. With the development of advanced 3D integration technology, MFC chips are introduced to further improve the integration density of 3D microsystems in space applications [4].…”

Section: Introductionmentioning

confidence: 99%

A 7.5–9 GHz GaAs Two-Channel Multi-Function Chip

Zhou

Zhang

et al. 2019

Electronics

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Based on the 0.5 μm GaAs enhancement/depletion (E/D) Pseudomorphic High Electron Mobility Transistor (pHEMT) process, a 7.5–9 GHz two-channel amplitude phase control multi-function chip (MFC) was developed successfully. The chip was integrated with a 6-bit digital phase shifter, a 6-bit digital attenuator, and a single pole single throw (SPST) switch in each channel. A design for the absorptive SPST switch is deployed to optimize the return loss and control channel array calibration. In the 8 dB and 16 dB attenuation bit, a switched-path-type topology is employed in order to obtain a good flatness of attenuation characteristic and achieve low additive phase shift. A 27-bit serial-to-parallel converter (SPC) was introduced to decrease the control lines and pads of the chip, and the power consumption was less than 70 mW. The measurement result shows that the insertion loss is less than −13 dB and the return loss is better than −19 dB. In both channels, the 64-state root mean square (RMS) errors of the phase shifter is less than 2° and the RMS parasitic amplitude error is less than 0.2 dB. The RMS attenuation error is less than 0.45 dB and the RMS parasitic phase error is less than 2.4°. The size of the chip is 3.5 mm × 4.5 mm.

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“…Even though high RF performances are achievable, relatively high power consumption and relatively higher product cost make them less attractive. Along with the advance in chip packaging, 3D-RF system-in-package (SiP) technology brings the advantages of compact size, electromagnetic isolation, and effective interconnection as presented in [11,12,13,14]. Thousands of TRMs may be needed to realize an AESA system, thus reducing the cost per each TRM has a significant meaning in the cost reduction of an array system for various low-cost commercial applications.…”

Section: Introductionmentioning

confidence: 99%

An X-band Bi-Directional Transmit/Receive Module for a Phased Array System in 65-nm CMOS

Nguyen

Nam

Choe

et al. 2018

Sensors

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We present an X-band bi-directional transmit/receive module (TRM) for a phased array system utilized in radar-based sensor systems. The proposed module, comprising a 6-bit phase shifter, a 6-bit digital step attenuator, and bi-directional gain amplifiers, is fabricated using 65-nm CMOS technology. By constructing passive networks in the phase-shifter and the variable attenuator, the implemented TRM provides amplitude and phase control with 360° phase coverage and 5.625° as the minimum step size while the attenuation range varies from 0 to 31.5 dB with a step size of 0.5 dB. The fabricated T/R module in all of the phase shift states had RMS phase errors of less than 4° and an RMS amplitude error of less than 0.93 dB at 9–11 GHz. The output 1dB gain compression point (OP1dB) of the chip was 5.13 dBm at 10 GHz. The circuit occupies 3.92 × 2.44 mm2 of the chip area and consumes 170 mW of DC power.

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A 3-D X-Band T/R Module Package With an Anodized Aluminum Multilayer Substrate for Phased Array Radar Applications

Cited by 53 publications

References 15 publications

Uncertainty propagation analysis by an extended sparse grid technique

Uncertainty propagation analysis by an extended sparse grid technique

A 7.5–9 GHz GaAs Two-Channel Multi-Function Chip

An X-band Bi-Directional Transmit/Receive Module for a Phased Array System in 65-nm CMOS

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