Ihis paper presents a testable design of dynamic randomaccess memory (DRAM) architecture which allows one to access multiple cells in a word l i e simultaneously. The technique utilizes the two-dimensional (2D) organization of the DRAM and the resulting speedup of the conventional algorithms is considerable. This paper specifically investigates the failure mechanisms in the three-dimensional (3D) DRAM with trench-type capacitor. As opposed to the earlier approaches for testing parametric faults that employed sliding diagonal-type tests with O (n 3 / 2) complexity, the algorithms discussed in this paper are different and have O (m) complexity, where p is the number of subarrays within the DRAM chip. These algorithms can be applied externally from the chip and also they can be easily generated for built-in self-test (BIST) applications.