Proceedings IEEE Computer Society Workshop on VLSI 2001. Emerging Technologies for VLSI Systems
DOI: 10.1109/iwv.2001.923152
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A 1-GSPS CMOS flash A/D converter for system-on-chip applications

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Cited by 36 publications
(5 citation statements)
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“…As mentioned in the previous section, the major challenge in flash ADCs is the comparators and reference voltages of them causing the greatest impact power consumption, area occupation on a chip and limited speed, the second problem is the encoders' delay. Above-mentioned setbacks are conducted in a number of papers [10][11][12][13][14][15][16][17][18][19][20]. In this paper, both the above-mentioned problems are covered and a new flash ADC is presented.…”
Section: Review Of the Structure Flash Adcmentioning
confidence: 99%
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“…As mentioned in the previous section, the major challenge in flash ADCs is the comparators and reference voltages of them causing the greatest impact power consumption, area occupation on a chip and limited speed, the second problem is the encoders' delay. Above-mentioned setbacks are conducted in a number of papers [10][11][12][13][14][15][16][17][18][19][20]. In this paper, both the above-mentioned problems are covered and a new flash ADC is presented.…”
Section: Review Of the Structure Flash Adcmentioning
confidence: 99%
“…The **threshold inverter quantisation (TIQ)-based ADC overcomes these problems. TIQ-based ADC does not require any resistor ladder; hence it is more power and space efficient [15][16][17][18][19][20].…”
Section: Introductionmentioning
confidence: 99%
“…DFAL-TIQ comparators in the suggested work are judiciously selected to attain 0.065 Vstep size, which is premeditated from analog input voltage full-scale range. Premeditated step size is denoted as 1 LSB in further consideration and mathematically represented as follows [5]. 5K n = ( ) n µ n C ox (6) K p = ( ) p µ p C ox (7) HereV tn signifies threshold voltage of N MOS transistor &V tp signifies threshold voltageof P MOS transistorwhich are used for LSB calculationwhere asμ n gives the mobility of N MOS andμ p represents the mobility of P MOS and transistors respectively.…”
Section: Modified Flash Adc Designmentioning
confidence: 99%
“…3. is applied with analog input signal; trailed by identical gain booster stage to deliver the full voltage swing and improve the linearity of the system [12].Using the mathematical relation given in (5) For attaining the different quantizer levels in P MOS side (W/L) n is held in reserve at least value, at the same time, the channel widths of the P MOS transistors are speckled to curtail the flow of current during metastable region i.e. Voltage Transfer Curve (VTC).…”
Section: Modified Flash Adc Designmentioning
confidence: 99%
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