A 0.9V 66MHz access, 0.13um 8M(256K×32) local SONOS embedded flash EEPROM

Seo, Min-Woong; Sim, Sung‐Han; Sim, Young-suk; On, M.H.; Kim, S.W.; Cho, I.W.; Lee, H.S.; Kim, G.H.; Kim, M.G.

doi:10.1109/vlsic.2004.1346505

Cited by 4 publications

(4 citation statements)

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“…A WEP <10 −6 can be achieved with an 80 ns write time. This is still much faster than flash memories, which demonstrate write delays in orders of few microseconds [2]. We tabulated our results in comparison with the state-ofthe-art present memory types in Table II.…”

Section: Simulation Resultsmentioning

confidence: 99%

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Straintronics-Based Random Access Memory as Universal Data Storage Devices

Barangi

Mazumder

2015

IEEE Trans. Magn.

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Nanomagnetic and spin-based memories are distinguished for their high data endurance in comparison with their charge-based peers. However, they have drawbacks, such as high write energy and poor scalability due to high write current. In this paper, we apply the straintronics principle that seeks the combination of piezoelectricity and inverse magnetostriction (Villari effect), to design a proof-of-principle 2 Kb nonvolatile magnetic memory in 65 nm CMOS technology. Our simulation results show read-access and write-cycle energies as low as 49 and 143 fJ/b, respectively. At a nominal supply level of 1 V, reading can be performed as fast as 562 MHz. Write error rates <10 −7 and 10 −15 can be obtained at 10 and 5 MHz, respectively. In addition to nonvolatility, ultralow energy per operation, and high performance, our STRs memory has a high storage density with a cell size as small as 0.2 µm 2 .

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Section: Simulation Resultsmentioning

confidence: 99%

“…Flash memories, as nonvolatile CMOS memories, demonstrate relatively high data density and read throughput, but they have low write and erase speeds, Manuscript as well as they require high voltages for programming and erasing. The work by Seo et al [2] dissipate 7 mA at 66 MHz read throughput and has 20 μs write delay.…”

Section: Introductionmentioning

confidence: 99%

Straintronics-Based Random Access Memory as Universal Data Storage Devices

Barangi

Mazumder

2015

IEEE Trans. Magn.

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“…Several studies [1]- [3] have been performed in order to find the best tradeoff between the complexity of the architecture and the performances offered in terms of data retention and endurance. However, such a technology sometimes failed to provide enough safe margin for extremely high temperatures applications.…”

Section: Introductionmentioning

confidence: 99%

Characterization of a MEMS-Based Embedded Non Volatile Memory Array for Extreme Environments

Zambelli

Olivo

Gaddi

et al. 2011

2011 3rd IEEE International Memory Workshop (IMW)

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“…On the contrary, FeRAM operates within VDD and no pumping circuit is involved. Thus, even if one cell footprint is large for FeRAM, .8.34 FeRAM in small-density application (a)[60] ( c 1996 IEEE) and comparison between FeRAM (b)[50] ( c 2005 IEEE) and FLASH (c)[61] ( c 2004 IEEE) for large-capacity devices…”

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confidence: 99%

Embedded Memories for Nano-Scale VLSIs

2009

Integrated Circuits and Systems

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A 0.9V 66MHz access, 0.13um 8M(256K×32) local SONOS embedded flash EEPROM

Cited by 4 publications

References 0 publications

Straintronics-Based Random Access Memory as Universal Data Storage Devices

Straintronics-Based Random Access Memory as Universal Data Storage Devices

Characterization of a MEMS-Based Embedded Non Volatile Memory Array for Extreme Environments

Embedded Memories for Nano-Scale VLSIs

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