Straintronics-Based Random Access Memory as Universal Data Storage Devices

Abstract

Nanomagnetic and spin-based memories are distinguished for their high data endurance in comparison with their charge-based peers. However, they have drawbacks, such as high write energy and poor scalability due to high write current. In this paper, we apply the straintronics principle that seeks the combination of piezoelectricity and inverse magnetostriction (Villari effect), to design a proof-of-principle 2 Kb nonvolatile magnetic memory in 65 nm CMOS technology. Our simulation results show read-access and write-cycle energies as low as 49 and 143 fJ/b, respectively. At a nominal supply level of 1 V, reading can be performed as fast as 562 MHz. Write error rates <10 −7 and 10 −15 can be obtained at 10 and 5 MHz, respectively. In addition to nonvolatility, ultralow energy per operation, and high performance, our STRs memory has a high storage density with a cell size as small as 0.2 µm 2 .

Straintronics: A leap toward ultimate energy efficiency of magnetic random access memories

“…When the voltage on top of the PZT is retained for a long time, the sTJ will enter a metastable state, where successful flipping of the magnetization vector is no longer guaranteed [10]. This feature, however, is handy when we consider the random number generation procedure.…”

“…furthermore, we discuss a recently proposed nonvolatile straintronics-based random access memory (rAm) [10] that combines piezoelectricity and T A B L E 1 a comparison of FImS, Stt, and straintronics magnetization switching approaches.…”

Investigation of Multilayer Nanostructures of Magnetic Straintronics Based on the Anisotropic Magnetoresistive Effect

“…The market for combined sensors, transducers and MEMS is predicted by Marketwatch to grow by an average of 11.74% by 2025. This forecast is based on an increase in global demand for portable and wearable devices; in addition, demand for combined microelectronic devices will increase in the consumer markets: electronics, Internet of smart things (IoT), automotive, healthcare, aerospace and defense industries [1][2][3][4][5]. According to estimates, the market for magnetosensitive transducers by 2027 will reach a value of USD~4.7 billion, with an increase over the forecast period by an average of 6% [6].…”

Effect of temperature variations and thermal noise on the static and dynamic behavior of straintronics devices

“…Strain-assisted switching and details of read and write operations of the device are studied in detail in previous works. 15,16,28 In this section, a brief introduction of the device's architecture and the switching principle is provided. The architecture of the straintronics MTJ is given in Fig.…”

“…This energy efficiency, however, comes at the expense of more complicated write algorithms and iterative methods in memory applications. 28 The latter is because a write operation in MTJ-based memories consists of flipping of the magnetization from parallel to antiparallel orientation or vice versa, which is warranted in STT-based switching, but requires iterative methods in straintronics memories. 28 Nevertheless, the straintronics method still demonstrates remarkable advantages over STT switching when it comes to energy-delay products 29 (a metric to evaluate the tradeoff between energy and delay), making it a promising candidate for future memory applications.…”