Представлены результаты экспериментальных исследований магнитострикционных и магниторезистивных свойств тонкопленочных многослойных наноструктур Ta/FeNiCo/CoFe/Ta и Ta/FeNiCo/CoFeВ/Ta на окисленных кремниевых подложках диаметром 100 мм. Экспериментально установлена зависимость величины анизотропного магниторезистивного эффекта от величины механических деформаций в экспериментальных образцах наноструктур.
The paper presents the results of experimental studies of the magnetostriction and magnetoresistive properties of thin-film multilayer nanostructures Ta/FeNiCo/CoFe/Ta and Ta/FeNiCo/CoFeB/Ta on oxidized silicon substrates with a diameter of 100 mm. The dependence of the magnitude of the anisotropic magnetoresistive effect on the magnitude of mechanical strains in experimental samples of nanostructures has been experimentally established.
The article presents the results of experimental studies of multilayer nanostructures of magnetic straintronics formed by magnetron sputtering on a 100 mm silicon wafer. The object of the study is two types of nanostructures: Ta/FeNiCo/CoFe/Ta and Ta/FeNi/CoFe/Ta, differing in the ratio of magnetic layers. The magnetic and magnetoresistive characteristics of multilayer nanostructures under varying mechanical loads are studied both on a 100 mm wafer and in the form of 4 × 20 mm2 samples of two types. The first, where the axis of easy magnetization is directed along the long side of the sample, and the second, where the axis of easy magnetization is a tilt at 45°. Based on the obtained data, the conclusions about the practical application of these nanostructures in magnetic straintronics elements are drawn.
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