2021
DOI: 10.1134/s2635167621020026
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Synthetic Antiferromagnetic Structures in Technology of Spintronic Devices

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“…Due to the absence of Joule losses, and their sub-μm wavelength in the GHz-THz frequency range, magnons have been proposed for the development of information carrier devices, for both analog and digital computation and signal processing, as well as for unconventional computational frameworks, such as neuromorphic and reservoir computing [3][4][5][6][7][8][9][10][11] . In this context, synthetic antiferromagnets (SAFs) 12,13 , i.e. magnetic structures characterized by two ferromagnetic layers antiparallelly coupled at remanence via interlayer exchange coupling due to the presence of a non-magnetic interlayer, are promising systems for the development of different types of magnonic devices, thanks to their very high degree of tunability [14][15][16] .…”
Section: Introductionmentioning
confidence: 99%
“…Due to the absence of Joule losses, and their sub-μm wavelength in the GHz-THz frequency range, magnons have been proposed for the development of information carrier devices, for both analog and digital computation and signal processing, as well as for unconventional computational frameworks, such as neuromorphic and reservoir computing [3][4][5][6][7][8][9][10][11] . In this context, synthetic antiferromagnets (SAFs) 12,13 , i.e. magnetic structures characterized by two ferromagnetic layers antiparallelly coupled at remanence via interlayer exchange coupling due to the presence of a non-magnetic interlayer, are promising systems for the development of different types of magnonic devices, thanks to their very high degree of tunability [14][15][16] .…”
Section: Introductionmentioning
confidence: 99%