910 nm vertical-cavity surface-emitting laser arrays with 100 W output power level and low driving current

Zhang, Jianwei; Zhang, Xing; Hofmann, Werner; Liu, Kefu; Zhang, Jun; Qiu, Jian; Zeng, Yugang; Fu, Xihong; Huang, Yuewang; Lei, Xiang; Liu, Yingying; Zhang, Jiye; Qin, Li; Wang, Lijun

doi:10.7567/jjap.57.100302

Cited by 11 publications

(7 citation statements)

References 28 publications

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“…Figure a shows the regular tendency of the thickness‐dependent bandgap of narrow bandgap 2D semiconductors. As interlayer interaction of thick 2D materials causes the reduction of lattice constants and introduces band dispersions of conduction bands and valence bands, the bandgap of 2D materials gradually decreases with the increasing thickness . Both van der Waals layered and nonlayered 2D semiconductors exhibit the thickness‐dependent characteristic.…”

Section: Room‐temperature Ir Photon Detectors Based On Atomic Layer Mmentioning

confidence: 99%

Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers

Wang

Xia

et al. 2019

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102

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Room-temperature operating means a profound reduction of volume, power consumption, and cost for infrared (IR) photodetectors, which promise a wide range of applications in both military and civilian areas, including individual soldier equipment, automatic driving, etc. Inspired by this fact, since the beginning of 1990s, great efforts have been made in the development of uncooled thermal detectors. During the last two decades, similar efforts have been devoted using IR photon detectors, especially based on photovoltaic effects. Herein, the proven technologies, which have been commercialized with a large format, like InGaAs/InP pin diodes, InAsSb barrier detectors, and high-operating-temperature HgCdTe devices, are reviewed. The newly developed technology is emphasized, which has shown unique superiority in detecting mid-wavelength and long-wavelength IR signals, such as quantum cascade photodetectors. Finally, brand-new concept devices based on 2D materials are introduced, which are demonstrated to provide additional degrees of freedom in designing and fabricating room-temperature IR devices, for example, the construction of multi-heterojunctions without introducing lattice strain, the convenient integration of optical waveguides and electronic gratings. All information provided here aims to supply a full view of the progress and challenges of room-temperature IR detectors.has its own IR radiation characteristic which contains a wealth of information. For thousands of years, people have studied the visible light as the sensory spectrum of the human eye is only 380-740 nm. But for the invisible IR, people did not know it until the British astronomer Herschel discovered it with a blackened mercury thermometer over 200 years ago, since then the IR technology had developed slowly because people were not aware of the importance of IR in the next 100 years. [1,2] During World War II, PbS IR detectors for the first time were applied on battleships as a "top-secret" instrument, thus people began to focus research on IR technology. In comparison with visible, IR technology has unique characteristics:better environmental adaptability, stronger anti-interference ability, and higher resolution capability. With advantages of working at night or in harsh weather, transmitting information securely, and identifying the camouflaged target accurately, the IR detectors have been researched and widely applied in military, national defense, bioscience, and other momentous fields. [3][4][5] In the historical development of IR photo detectors, the response spectral is being extended to longer wavelengths; the pixels of imaging have been expanded from single element to tens of millions; the operating temperatures of cooled IR detectors are being increased to be closer to room temperature. [6][7][8] Nowadays, the remote IR imaging becomes clearer; the noise-equivalent temperature difference (NETD) of IR detection systems can reach 10 mK [9] or even lower; and IR detection systems become more and more integrated. [10] However, most high-...

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Section: Room‐temperature Ir Photon Detectors Based On Atomic Layer Mmentioning

confidence: 99%

Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers

Wang

Xia

et al. 2019

Small

102

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“…[ 17–19 ] In general, 2D materials possess highly interesting electrical, optical, electrochemical, and mechanical properties, such as layer‐dependent bandgaps, leading to tunable optical and electrical properties. [ 20–23 ] While 2D variants of layered chalcogenides have developed a firm grounding in the literature, 1D forms of these metal chalcogenides have recently begun to garner interest due to their potential for scalable device architectures, larger surface areas, and lower active device volumes due to the small diameter of the nanowire. Due to the lower active volumes limiting the region where any electronic, heating, or chemical interaction will take place, scaling the dimensions of devices down to nanowire form is appealing for increased stability [ 24 ] and also reduced device power requirements.…”

Section: Introductionmentioning

confidence: 99%

Crystallographically Controlled Synthesis of SnSe Nanowires: Potential in Resistive Memory Devices

Davitt

Manning

Robinson

et al. 2020

Adv Materials Inter

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Here we report the controlled growth of SnSe nanowires by a liquid injection chemical vapor deposition (CVD) method employing a distorted octahedral [SnCl4{ n BuSe(CH2)3Se n Bu}] single source diselenoether precursor. CVD with this single source precursor allows morphological and compositional control of the SnSex structures formed, including the transformation of SnSe2 nanoflakes into SnSe nanowires and again to SnSe nanoflakes with increasing growth temperature. Significantly, highly crystalline SnSe nanowires with an orthorhombic Pnma 62 crystal structure could be controllably synthesized in two growth directions, either <011> or <100>. The ability to tune the growth direction of SnSe will have important implications for devices constructed using these nanocrystals. The SnSe nanowires with a <011> growth direction displayed a reversible polarity dependent memory switching ability, not previously reported for nanoscale SnSe. A resistive switching on/off ratio of 10 3 without the use of a current compliance limit was seen, illustrating the potential use of SnSe nanowires for low power non-volatile memory applications.

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“…[ 27,28 ] The remarkable properties of PtSe 2 , leading to numerous potential applications have been recently reviewed. [ 29 ] In short, PtSe 2 which undergoes a semimetal to semiconductor transition when thinned to a few layers, [ 30,31 ] has shown to have high potential in transistors, [ 32 ] chemical sensing, [ 25 ] IR‐photodetection, [ 33,34 ] and piezoresistive sensors. [ 12 ] However, sputtering and evaporation processes offer a lower degree of conformality compared to ALD, leaving the highly demanded 3D unattainable.…”

Section: Introductionmentioning

confidence: 99%

Hybrid Devices by Selective and Conformal Deposition of PtSe₂ at Low Temperatures

Prechtl

Parhizkar

Hartwig

et al. 2021

Adv Funct Materials

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2D materials display very promising intrinsic material properties, with multiple applications in electronics, photonics, and sensing. In particular layered platinum diselenide has shown high potential due to its layer-dependent tunable bandgap, low-temperature growth, and high environmental stability. Here, the conformal and area selective (AS) low-temperature growth of layered PtSe 2 is presented defining a new paradigm for 2D material integration. The thermally-assisted conversion of platinum which is deposited by AS atomic layer deposition to PtSe 2 is demonstrated on various substrates with a distinct 3D topography. Further the viability of the approach is presented by successful on-chip integration of hybrid semiconductor devices, namely by the manufacture of a highly sensitive ammonia sensors channel with 3D topography and fully integrated infrared-photodetectors on silicon photonics waveguides. The presented methodologies of conformal and AS growth therefore lay the foundation for new design routes for the synthesis of more complex hybrid structures with 2D materials.

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910 nm vertical-cavity surface-emitting laser arrays with 100 W output power level and low driving current

Cited by 11 publications

References 28 publications

Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers

Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers

Crystallographically Controlled Synthesis of SnSe Nanowires: Potential in Resistive Memory Devices

Hybrid Devices by Selective and Conformal Deposition of PtSe₂ at Low Temperatures

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910 nm vertical-cavity surface-emitting laser arrays with 100 W output power level and low driving current

Cited by 11 publications

References 28 publications

Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers

Sensing Infrared Photons at Room Temperature: From Bulk Materials to Atomic Layers

Crystallographically Controlled Synthesis of SnSe Nanowires: Potential in Resistive Memory Devices

Hybrid Devices by Selective and Conformal Deposition of PtSe2 at Low Temperatures

Contact Info

Product

Resources

About

Hybrid Devices by Selective and Conformal Deposition of PtSe₂ at Low Temperatures