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Extremely energy-efficient oxide-confined high-speed 850 nm vertical-cavity surface-emitting lasers for optical interconnects are presented. Error-free performance at 17 and 25 Gb/s via a 100 m multimode fiber link is demonstrated at record high dissipation-power-efficiencies of up to 69 fJ/bit ͑Ͻ0.1 mW/ Gbps͒ and 99 fJ/bit, respectively. These are the most power efficient high-speed directly modulated light sources reported to date. The total energy-to-data ratio is 83 fJ/bit at 25 °C and reduces to 81 fJ/bit at 55 °C. These results were obtained without adjustment of driving conditions. A high D-factor of 12.0 GHz/ ͑mA͒ 0.5 and a K-factor of 0.41 ns are measured.

Semiconductor vertical-cavity surface-emitting lasers (VCSELs) with wavelengths from 491.8 to 565.7 nm, covering most of the ‘green gap’, are demonstrated. For these lasers, the same quantum dot (QD) active region was used, whereas the wavelength was controlled by adjusting the cavity length, which is difficult for edge-emitting lasers. Compared with reports in the literature for green VCSELs, our lasers have set a few world records for the lowest threshold, longest wavelength and continuous-wave (CW) lasing at room temperature. The nanoscale QDs contribute dominantly to the low threshold. The emitting wavelength depends on the electron–photon interaction or the coupling between the active layer and the optical field, which is modulated by the cavity length. The green VCSELs exhibit a low-thermal resistance of 915 kW−1, which benefits the CW lasing. Such VCSELs are important for small-size, low power consumption full-color displays and projectors.

We demonstrate an electrically pumped high contrast grating (HCG) VCSEL operating at 1550 nm incorporating a proton implant-defined aperture. Output powers of >1 mW are obtained at room temperature under continuous wave operation. Devices operate continuous wave at temperatures exceeding 60 degrees C. The novel device design, which is grown in a single epitaxy step, may enable lower cost long wavelength VCSELs.

We propose a novel design for multi-wavelength arrays of vertical cavity surface-emitting lasers (VCSELs) using high-contrast gratings (HCGs) as top mirrors. A range of VCSEL cavity wavelengths in excess of 100 nm is predicted by modifying only the period and duty-cycle of the high-contrast gratings, while leaving the epitaxial layer thickness unchanged. VCSEL arrays fabricated with this novel design can easily accommodate the entire Er-doped fiber amplifier bandwidth with emission wavelengths defined solely by lithography with no restrictions in physical layout. Further, the entire process is identical to that of solitary VCSELs, facilitating cost-effective manufacturing.

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Low threshold continuous-wave (CW) lasing of current injected InGaN quantum dot (QD) vertical-cavity surface-emitting lasers (VCSELs) was achieved at room temperature. The VCSEL was fabricated by metal bonding technique on a copper substrate to improve the heat dissipation ability of the device. For the first time, lasing was obtained at yellow-green wavelength of 560.4 nm with a low threshold of 0.61 mA, corresponding to a current density of 0.78 kA/cm2. A high degree of polarization of 94% were measured. Despite the operation in the range of "green gap" of GaN-based devices, single longitudinal mode laser emission was clearly achieved due to the high quality of active region based on InGaN QDs and the excellent thermal design of the VCSELs.

A study has been made of the curing of epoxy resins from 2: 2‐bis‐(4‐hydroxyphenyl)propane with phthialic anhydride. It is shown that in all cases an equilibrium is set up in which, after complete reaction of the epoxy groups, there are present anhydride, monoester and hydroxyl groups. The effect of temperature on the content of these groups has been determined and shown to be considerable. On heating cured resins, most of the monoester groups are split off and phthalic anhydride is evolved. A minimum point is obtained in the graph relating loss of weight and amount of anhydride used. The reason for this is discussed. The distribution of the various types of group has been determined in cured resins by chemical methods, which affords a good picture of the structure of resins cured under different conditions.