Monolithically integrated multi-wavelength VCSEL arrays using high-contrast gratings

Karagodsky, Vadim; Pesala, Bala; Chase, Christopher; Hofmann, Werner; Koyama, Fumio; Chang-Hasnain, Connie J.

doi:10.1364/oe.18.000694

Cited by 60 publications

(44 citation statements)

References 14 publications

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“…In addition, HCG has a rich phase response in reflection and transmission, and this promises applications in phase-engineered optics. For example, a multi-wavelength VCSEL array can be realized by changing the reflection phase of HCG with its dimensions [37]. Furthermore, arbitrary wave-fronts can be obtained by spatially chirping the grating dimensions.…”

Section: Introduction To High Contrast Gratingmentioning

confidence: 99%

High-contrast gratings for integrated optoelectronics

Chang-Hasnain¹,

Yang²

2012

Adv. Opt. Photon.

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473

171

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Integrated optoelectronics has seen its rapid development in the past decade. From its original primary application in long-haul optical communications and access network, integrated optoelectronics has expanded itself to data center, consumer electronics, energy harness, environmental sensing, biological and medical imaging, industry manufacture control etc. This revolutionary progress benefits from the advancement in light generation, manipulation, detection and its interaction with other systems. Device innovation is the key in this advancement. Together they build up the component library for integrated optoelectronics, which facilities the system integration.High contrast grating (HCG) is an emerging element in integrated optoelectronics. Compared to the other elements, HCG has very rich properties and design flexibility. Some of them are fascinating and extraordinary, such as broadband high reflectivity, and high quality factor resonance -all it needs is a single thin-layer of HCG. Furthermore, it can be a microelectromechanical structure. These rich properties are readily to be harnessed and turned into novel devices.This dissertation is devoted to investigate the physical origins of the extraordinary features of HCG, and explore its applications in novel devices for integrated optoelectronics. An intuitive picture will be presented to explain the HCG physics. The essence of HCG lies in its superb manipulation of light, which can be coupled to applications in light generation and detection. Various device innovations, such as lowloss hollow-core waveguide, fast optical phased array, tunable VCSEL and detector are demonstrated with the HCG as a key element. This breadth of functionality of HCG suggests that HCG has reached beyond a single element in integrated optoelectronics; it has enabled a new platform for integrated optoelectronics.

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Section: Introduction To High Contrast Gratingmentioning

confidence: 99%

High-contrast gratings for integrated optoelectronics

Chang-Hasnain¹,

Yang²

2012

Adv. Opt. Photon.

Self Cite

473

171

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“…HCGs are believed to offer a number of advantages 71 , such as transverse mode and polarization control and a broader reflectivity spectrum than epitaxially grown DBRs. An additional benefit is the possibility to set the resonance wavelength of the VCSEL by the dimensions of the grating 72 , which recently was demonstrated in a GaAs-based VCSEL 73 . By varying the duty cycle and/or the period of the grating, while maintaining the same grating layer thickness, the phase of the reflected wave can be altered without affecting the magnitude of the reflection.…”

Section: Mirrorsmentioning

confidence: 99%

Progress and challenges in electrically pumped GaN-based VCSELs

et al. 2016

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The Vertical-Cavity Surface-Emitting Laser (VCSEL) is an established optical source in short-distance optical communication links, computer mice and tailored infrared power heating systems. Its low power consumption, easy integration into two-dimensional arrays, and low-cost manufacturing also make this type of semiconductor laser suitable for application in areas such as high-resolution printing, medical applications, and general lighting. However, these applications require emission wavelengths in the blue-UV instead of the established infrared regime, which can be achieved by using GaN-based instead of GaAs-based materials. The development of GaN-based VCSELs is challenging, but during recent years several groups have managed to demonstrate electrically pumped GaN-based VCSELs with close to 1 mW of optical output power and threshold current densities between 3-16 kA/cm 2 . The performance is limited by challenges such as achieving high-reflectivity mirrors, vertical and lateral carrier confinement, efficient lateral current spreading, accurate cavity length control and lateral optical mode confinement. This paper summarizes different strategies to solve these issues in electrically pumped GaN-VCSELs together with state-of-the-art results. We will highlight our work on combined transverse current and optical mode confinement, where we show that many structures used for current confinement result in unintentionally optically anti-guided resonators. Such resonators can have a very high optical loss, which easily doubles the threshold gain for lasing. We will also present an alternative to the use of distributed Bragg reflectors as high-reflectivity mirrors, namely TiO2/air high contrast gratings (HCGs). Fabricated HCGs of this type show a high reflectivity (>95%) over a 25 nm wavelength span.

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“…For wavelength division multiplexed (WDM) optical interconnects, the dielectric DBR on Si can be replaced by a silicon nitride HCG on Si since this allows for setting the wavelengths of individual VCSELs in an array by the grating parameters [12]. In addition, a silicon nitride waveguide can be connected to the HCG for in-plane emission, which has been demonstrated for long-wavelength VCSELs [7,13,14].…”

Section: Concept and Designmentioning

confidence: 99%

Silicon-integrated short-wavelength hybrid-cavity VCSEL

Haglund¹,

Kumari²,

Westbergh³

et al. 2015

Opt. Express

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Abstract:We demonstrate a short-wavelength hybrid-cavity vertical-cavity surface-emitting laser (VCSEL) heterogeneously integrated on silicon. A GaAs-based "half-VCSEL" has been attached to a dielectric distributed Bragg reflector (DBR) on a silicon wafer using ultra-thin divinylsiloxanebis-benzocyclobutene (DVS-BCB) adhesive bonding, thereby creating a cavity with the standing-wave optical field extending over the silicon-and GaAs-based parts of the cavity. A 9 µm oxide aperture diameter VCSEL with a threshold current of 1.2 mA produces 1.6 mW optical output power at 6.0 mA bias current with a wavelength of ~845 nm.

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Monolithically integrated multi-wavelength VCSEL arrays using high-contrast gratings

Cited by 60 publications

References 14 publications

High-contrast gratings for integrated optoelectronics

High-contrast gratings for integrated optoelectronics

Progress and challenges in electrically pumped GaN-based VCSELs

Silicon-integrated short-wavelength hybrid-cavity VCSEL

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